The N-Channel SuperFET III MOSFET is a high voltage switch using charge balance technology, offering low on-resistance and gate charge for efficient switching. It withstands extreme dv/dt rates, with a voltage rated at 650 V and a continuous drain current of 6 A. Designed for industrial, power supply, telecom, and lighting applications, it features an ultra low gate charge of 11 nC, avalanche tested, and compliant with RoHS standards. Its robust construction facilitates reliable performance in demanding power management functions.
ONSEMI FCU600N65S3R0 High Voltage MOSFET Specifications:
Drain to Source Voltage: 650 V
Gate to Source Voltage Dc: +30 V
Drain Current Continuous: 6 A at Tg=25°C
Pulsed Drain Current: 15 A
Single Avalanche Energy: 24 mJ
Repetitive Avalanche Energy: 0.54 mJ
Maximum Power Dissipation: 54 W
Operating and Storage Temperature Range: -55°C to +150°C
Thermal Resistance Junction to Case: 23 °C/W
Thermal Resistance Junction to Ambient: 100 °C/W
Package: I-PAK with Straight Leads
Final Testing includes avalanche, on-resistance, and dv/dt performance
Buy the ON Semiconductor FCU600N65S3R0 – Reliable Power MOSFET for Industrial Applications
Purchase the ON Semiconductor FCU600N65S3R0 high voltage MOSFET online today. Designed for demanding industrial and power supply applications, it offers excellent low resistance, high avalanche energy, and RoHS compliance. Featuring a voltage rating of 650 V and a continuous drain current of 6 A, this device ensures reliable operation in high-voltage switching environments. Its low gate charge of 11 nC simplifies gate drive circuitry, reducing overall system complexity. Ideal for telecom, server, and industrial power supplies, buy now to optimize your power systems with a trusted, high-performance component.
Buy ON Semiconductor FCU600N65S3R0 now and experience unmatched reliability and superior switching in power management systems.
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