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ONSEMI FDA38N30 High-Voltage Power MOSFET

The FDA38N30 is a high-voltage N-Channel MOSFET designed for switching power applications, including power factor correction, flat panel display power, and power supplies. It features low on-resistance, high avalanche energy, and is 100% avalanche tested. With a maximum drain-source voltage of 300 V and continuous current of 3 A, this device offers excellent switching performance and reliability for electronic ballast, uninterruptible power supplies, and high-voltage switching circuits. Its RoHS compliance ensures environmentally friendly manufacturing and usage.

Authorized Distributors
Source:Newark
Part No:FDA38N30
Stock:948
Inv Date:06-10-2026
Price: Unit price: $4.76
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Source:DigiKey
Part No:FDA38N30
Stock:5323
Inv Date:06-10-2026
Price: Unit price: $5.04
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Part No:FDA38N30
Stock:1274
Inv Date:06-11-2026
Price: Unit price: $5.04
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Part No:FDA38N30
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.81
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Part No:FDA38N30
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.81
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Part No:FDA38N30
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.77
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Part No:FDA38N30
Stock:59
Inv Date:06-11-2026
Price: N/A
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ONSEMI FDA38N30 High-Voltage Power MOSFET Specifications:

  • Drain to Source Voltage: 300 V
  • Gate to Source Voltage: ±30 V
  • Drain Current (continuous at 25°C): 3 A
  • Drain Current (pulsed): 150 A
  • Single Pulsed Avalanche Energy: 1200 mJ
  • Repetitive Avalanche Energy: 31 mJ
  • Thermal Resistance Junction to Case: 0.4 °C/W
  • Thermal Resistance Junction to Ambient: 40 °C/W
  • Operating Temperature Range: -55°C to +150°C
  • Maximum Lead Temperature (soldering): 300°C for 5 sec
  • Gate Threshold Voltage: 3.0 V (min), 50 V (max)
  • On-Resistance (Vgs=10V, Id=19A): 0.070 to 0.085 Ω
  • Total Gate Charge (Vgs=10V): 60 nC
  • Package: TO-3PN (3-Lead, Plastic, EIAJ SC-65)

Buy the Buy ON Semiconductor FDA38N30 Part Number FDA38N30 Online

Purchase the ON Semiconductor FDA38N30 high-voltage N-channel MOSFET online today to upgrade your power and switching systems. This robust device features 300 V drain-source voltage, 3 A continuous current capabilities, low Rds(on), and is 100% avalanche tested, making it ideal for power factor correction, flat panel display power, and high-voltage power supplies. With RoHS compliance, it guarantees environmentally responsible manufacturing. Secure reliable, high-performance switching with fast response times and excellent thermal performance for demanding electronic applications. Buy now to enhance your project’s efficiency and durability.

Order your ON Semiconductor FDA38N30 power MOSFET today and ensure high-performance switching for your power supply and electronic circuits.

Frequently Asked Questions

Where can I buy ONSEMI FDA38N30?

You can click on the BUY or RFQ button to purchase FDA38N30 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDA38N30?

You can download the FDA38N30 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDA38N30?

ONSEMI

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