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ONSEMI FQD16N25CTM Power MOSFET

This N-Channel enhancement mode power MOSFET is manufactured using Fairchild Semiconductor's proprietary planar stripe and DMOS technology, designed to reduce on-state resistance and deliver excellent switching performance. With a drain-source voltage of 250 V and a continuous drain current of 16 A, it features low gate charge and avalanche energy strength, making it ideal for switched mode power supplies, active power factor correction, and electronic lamp ballasts. Its robust construction ensures high avalanche energy and reliable operation in high-voltage applications, offering superior efficiency and durability.

Authorized Distributors
Source:Newark
Part No:FQD16N25CTM
Stock:14324
Inv Date:06-10-2026
Price: Unit price: $0.382
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Part No:FQD16N25CTM
Stock:8924
Inv Date:06-11-2026
Price: Unit price: $1.92
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Part No:FQD16N25CTM
Stock:22500
Inv Date:06-10-2026
Price: Unit price: $0.495
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Part No:FQD16N25CTM
Stock:2500
Inv Date:06-11-2026
Price: N/A
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ONSEMI FQD16N25CTM Power MOSFET Specifications:

  • Drain-Source Voltage: 250 V
  • Drain Current - Continuous at 25°C: 16 A
  • Drain Current - Continuous at 100°C: 10.1 A
  • Pulsed Drain Current: 64 A
  • Gate-Source Voltage: ±30 V
  • Single Pulsed Avalanche Energy: 432 mJ
  • Repetitive Avalanche Energy: 160 mJ
  • Power Dissipation (Tc=25°C): 160 W
  • Thermal Resistance, Junction-to-Case: 0.78 °C/W
  • Thermal Resistance, Junction-to-Ambient: 110 °C/W
  • Operating Temperature Range: -55°C to +150°C
  • Maximum Lead Soldering Temperature: 300°C for 5 seconds
  • Gate Threshold Voltage: ZO V (typ.)
  • On-Resistance (Ves=10V, Ip=8A): 0.22 Ω (typ.)
  • Gate Charge (Vps=200V, Ip=16A): 53.5 nC
  • Capacitances (Vas=0V, Vos=25V, f=1MHz): Ciss=1080 pF, Coss=220 pF, Crs=89 pF
  • Switching Delay Times: ta(on) 15-40 ns, tao 135-280 ns
  • Maximum Diode Forward Voltage: 1.5 V at 16A
  • Maximum Reverse Recovery Time: 260 ns

Buy the Fairchild Series Power MOSFET: FQD16N25C

Purchase the Fairchild Series Power MOSFET FQD16N25C online today for efficient, high-voltage switching applications. Featuring a drain-source voltage of 250V and a continuous drain current of 16A, this device offers low gate charge and high avalanche energy, ensuring reliable performance in power supplies, PFC circuits, and electronic ballasts. Its robust construction ensures durability and superior switching efficiency, making it an excellent choice for demanding industrial power applications. Secure your supply now and enhance your project’s performance with this high-quality MOSFET.

Order your Fairchild Series Power MOSFET FQD16N25C today and give your high-voltage projects the dependable quality they deserve.

Frequently Asked Questions

Where can I buy ONSEMI FQD16N25CTM?

You can click on the BUY or RFQ button to purchase FQD16N25CTM from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FQD16N25CTM?

You can download the FQD16N25CTM datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FQD16N25CTM?

ONSEMI

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