This N-Channel enhancement mode power MOSFET is manufactured using Fairchild Semiconductor's proprietary planar stripe and DMOS technology, designed to reduce on-state resistance and deliver excellent switching performance. With a drain-source voltage of 250 V and a continuous drain current of 16 A, it features low gate charge and avalanche energy strength, making it ideal for switched mode power supplies, active power factor correction, and electronic lamp ballasts. Its robust construction ensures high avalanche energy and reliable operation in high-voltage applications, offering superior efficiency and durability.
Switching Delay Times: ta(on) 15-40 ns, tao 135-280 ns
Maximum Diode Forward Voltage: 1.5 V at 16A
Maximum Reverse Recovery Time: 260 ns
Buy the Fairchild Series Power MOSFET: FQD16N25C
Purchase the Fairchild Series Power MOSFET FQD16N25C online today for efficient, high-voltage switching applications. Featuring a drain-source voltage of 250V and a continuous drain current of 16A, this device offers low gate charge and high avalanche energy, ensuring reliable performance in power supplies, PFC circuits, and electronic ballasts. Its robust construction ensures durability and superior switching efficiency, making it an excellent choice for demanding industrial power applications. Secure your supply now and enhance your project’s performance with this high-quality MOSFET.
Order your Fairchild Series Power MOSFET FQD16N25C today and give your high-voltage projects the dependable quality they deserve.
Frequently Asked Questions
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