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ONSEMI FDC6301N Dual N-Channel FET

The FDC6301N is a dual N-Channel logic level enhancement mode field effect transistor produced using proprietary DMOS technology. Designed for low voltage applications, it offers very low on-state resistance, high current handling up to 0.22 A continuous, and features a gate-source voltage rating of -0.5 to 25 V. With a Vds maximum of 25 V and electrostatic discharge immunity exceeding 6kV Human Body Model, it is suitable for efficient switching in digital and inverter circuits. It also provides thermal management with a junction-to-ambient resistance of 140°C/W.

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Source:Newark
Part No:FDC6301N..
Stock:3680
Inv Date:06-10-2026
Price: Unit price: $0.618
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Part No:FDC6301N
Stock:42000
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Price: Unit price: $0.13507
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Part No:FDC6301N
Stock:27885
Inv Date:06-11-2026
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Part No:FDC6301N
Stock:21000
Inv Date:06-10-2026
Price: Unit price: $0.2028
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Part No:FDC6301N
Stock:21000
Inv Date:06-10-2026
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Part No:FDC6301N
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Inv Date:06-10-2026
Price: Unit price: $0.149
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Source:Arrow EU
Part No:FDC6301N
Stock:33000
Inv Date:06-11-2026
Price: N/A
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ONSEMI FDC6301N Dual N-Channel FET Specifications:

  • Drain-Source Voltage: 25 V
  • Gate-Source Voltage: -0.5 V to 25 V
  • Continuous Drain Current: 0.22 A
  • Peak Drain Current: 0.5 A
  • Power Dissipation: 0.9 W
  • Operating Temperature Range: -55°C to 150°C
  • Electrostatic Discharge Rating: >6kV Human Body Model
  • Thermal Resistance, Junction-to-Ambient: 140°C/W
  • Thermal Resistance, Junction-to-Case: 60°C/W
  • Gate Threshold Voltage: 0.6 to 1.5 V
  • Gate-Source Zener Voltage: 15 V
  • On-Resistance (Vgs= 4.5 V): 4.2 Ω
  • On-Resistance (Vgs= 2.7 V): 5.2 Ω
  • Total Gate Charge: 0.49 nC
  • Switching Times T_on and T_off: 45 ns and 32 ns respectively
  • ESD Protection: >6kV Human Body Model

Buy the ON Semiconductor FDC6301N – Reliable Dual N-Channel FET for Industrial Applications

Purchase the ON Semiconductor FDC6301N online today to take advantage of its low on-resistance, high ESD ruggedness, and efficient switching capabilities. Designed for low voltage digital and inverter applications, this dual N-Channel FET offers excellent thermal performance, with a maximum drain-source voltage of 25 V and continuous current handling of 0.22 A. Its compact SOT-23 package ensures easy integration into your circuits, providing reliable operation with a gate-source voltage range from -0.5 V to 25 V. Order now and improve your electronic designs with this durable, high-performance transistor.

Order your ON Semiconductor FDC6301N dual N-Channel FET today and enhance your digital and inverter circuit performance with this high-quality component.

Frequently Asked Questions

Where can I buy ONSEMI FDC6301N?

You can click on the BUY or RFQ button to purchase FDC6301N from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDC6301N?

You can download the FDC6301N datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDC6301N?

ONSEMI

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