This P-Channel 2.5V PowerTrench MOSFET features low on-resistance and fast switching suitable for battery power applications, load switching, power management, DC/DC conversion, and battery charging circuits. Produced using advanced trench technology, it offers high performance in a small, low-profile SuperSOT-6 package, which is 72% smaller than standard SO-8, making it ideal for space-constrained designs. It operates at voltages up to 20V with continuous drain current of -4.5A and features low gate charge for efficient switching performance.
Operating Junction Temperature Range: -55°C to +150°C
Thermal Resistance, Junction to Ambient: 78°C/W (RθJA), 156°C/W (RθJA on 1 in2 copper pad)
Package: SuperSOT-6, small footprint, 72% smaller than SO-8, 1mm thickness
Maximum Switching Delay Times: Turn-On delay 6-12 ns, Rise time 20-31 ns, Turn-Off delay 48-77 ns, Fall time 47-72 ns
Gate Charge: 8-12 nC, Gate to Source Charge 2 nC
Body Diode Forward Voltage: 0.8-1.2 V at 1.3A
Reverse Recovery Time: 24-36 ns
Reverse Recovery Charge: 13-20 nC
Buy the Fairchild FDC638APZ – Reliable PowerTrench MOSFET for Industrial Applications
Purchase the Fairchild FDC638APZ PowerTrench P-Channel MOSFET online today for efficient load switching, power management, and battery circuits. Its compact SuperSOT-6 package offers space savings, while low Rds(on) and gate charge ensure excellent switching performance. Designed for high efficiency in space-constrained environments, this device supports applications such as DC/DC conversion and battery charging, providing reliable operation up to 20V and -4.5A continuous drain current. Secure your inventory and upgrade your projects with this industry-leading MOSFET today.
Order your Fairchild FDC638APZ PowerTrench MOSFET today and enhance your battery power, load switching, and DC/DC conversion projects with reliable performance.
Frequently Asked Questions
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You can download the FDC638APZ datasheet or visit the ONSEMI website for support.
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ONSEMI
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