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ONSEMI FDMC86139P PowerMOSFET

The P-Channel PowerTrench MOSFET is engineered using advanced PowerTrench technology to deliver ultra-low RDS-on, fast switching performance, and high load capacity. Suitable for load switch and active clamp applications, it features a maximum drain-source voltage of -100 V and continuous drain current of 15 A at 25°C. Its robust design ensures reliable operation with a maximum power dissipation of 40 W. The device is RoHS compliant, 100% UIL tested, and ideal for high-efficiency power management within industrial and consumer electronic systems, offering optimized thermal characteristics and low gate charge for enhanced switching efficiency.

Authorized Distributors
Source:Newark
Part No:FDMC86139P
Stock:18
Inv Date:06-10-2026
Price: Unit price: $2.81
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Source:DigiKey
Part No:FDMC86139P
Stock:90
Inv Date:06-10-2026
Price: Unit price: $2.82
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Part No:FDMC86139P
Stock:17716
Inv Date:06-11-2026
Price: Unit price: $2.71
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Part No:FDMC86139P
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.44
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Part No:FDMC86139P
Stock:5517
Inv Date:06-10-2026
Price: Unit price: $0.915
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Part No:FDMC86139P
Stock:5517
Inv Date:06-10-2026
Price: Unit price: $0.915
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Part No:FDMC86139P
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.13
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Source:Arrow EU
Part No:FDMC86139P
Stock:17
Inv Date:06-11-2026
Price: N/A
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Part No:FDMC86139P
Stock:71
Inv Date:06-11-2026
Price: N/A
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ONSEMI FDMC86139P PowerMOSFET Specifications:

  • Drain-Source Voltage: -100 V
  • Gate-Source Voltage: ±225 V
  • Continuous Drain Current: 15 A at 25°C
  • Pulsed Drain Current: 44 A
  • Maximum Power Dissipation: 40 W at 25°C
  • Operating Junction Temperature Range: -55°C to +150°C
  • On-Resistance (Vgs = -10V): 67 mΩ (typ.)
  • On-Resistance (Vgs = -6V): 89 mΩ (typ.)
  • Avalanche Energy: 121 mJ
  • Thermal Resistance, Junction to Case: 3.4°C/W
  • Thermal Resistance, Junction to Ambient: 53°C/W
  • Gate Charge (Vgs=0 to -10V): 45 nC
  • Package: Power33, 13-inch reel with 3000 units
  • RoHS compliant, 100% UL tested
  • Designed for fast switching and load switch applications
  • Transition time for switching: 20 ns (rise), 30 ns (fall)
  • Body diode forward voltage: 0.84 V to 1.3 V at -4.4A
  • Temperature coefficient of threshold voltage: -63 mV/°C

Buy the Buy ON Semiconductor FDMC86139P Part Number FDMC86139P Online

Order the ON Semiconductor FDMC86139P PowerMOSFET online today to enhance your power switching systems. This high-efficiency, low RDS-on device offers excellent thermal performance and high current capacity, making it perfect for load switches and active clamp circuits. Its advanced PowerTrench technology ensures low on-resistance and fast switching times, reducing energy loss and heat. With RoHS compliance and 100% UL testing, it guarantees reliability, safety, and durability for industrial, consumer, and automation systems. Buy now to improve your electronic designs with proven high-performance power components, available for quick delivery and expert support.

Get ON Semiconductor FDMC86139P today—built for fast switching and high load capacity in power management applications.

Frequently Asked Questions

Where can I buy ONSEMI FDMC86139P?

You can click on the BUY or RFQ button to purchase FDMC86139P from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDMC86139P?

You can download the FDMC86139P datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDMC86139P?

ONSEMI

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