The FDP65N06 is a high-performance N-Channel MOSFET designed for switching power applications such as power factor correction, flat panel displays, and electronic ballasts. It features a low gate charge of 33 nC, low on-resistance of 0.016 Ω at Vgs = 10 V, and fast switching capabilities. With a drain-source voltage of 60 V and a continuous drain current of 65 A, it ensures reliable operation with high avalanche energy strength, suitable for demanding industrial electronics and power conversion tasks.
Purchase the Fairchild FDP65N06 online for your power conversion needs. This robust N-Channel MOSFET offers low Rds(on), high avalanche energy, and fast switching capabilities. Designed for high-current applications, it ensures reliable operation in power supplies, industrial equipment, and electronic ballast systems. With a maximum drain-source voltage of 60 V and a continuous drain current of 65 A, it is suitable for demanding industrial environments. Buy today to enhance your power switching efficiency and system reliability with a proven high-performance component.
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You can download the FDP65N06 datasheet or visit the ONSEMI website for support.
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