The FDV301N is a surface-mount, N-channel logic-level enhancement mode digital FET housed in a SOT-23 package. It features high-density DMOS technology optimized for low on-resistance and low gate charge, delivering superior switching performance. This versatile device can replace multiple digital transistors with different bias resistors and is suitable for low-voltage and power management applications. Key specifications include a drain-to-source voltage of 25V, gate-to-source voltage of 8V, continuous drain current of 220mA, power dissipation of 350mW, and a low on-state resistance of 3.1Ω at Vgs 4.5V. The device operates within a temperature range of -55°C to 150°C.
Purchase the ON Semiconductor FDV301N online today. This highly reliable N-channel logic-level FET is designed for low-voltage applications and offers excellent switching performance. With a package size of SOT-23, it features a drain-to-source voltage of 25V, low Rds(on), and a maximum continuous drain current of 220mA. Ideal for power management and digital control circuits, this device guarantees low gate charge and efficient operation over a temperature range of -55°C to 150°C. Ensure your electronics run smoothly with this dependable component.
You can click on the BUY or RFQ button to purchase FDV301N from an authorized ONSEMI distributor.
You can download the FDV301N datasheet or visit the ONSEMI website for support.
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