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ONSEMI FFSB1065B Silicon Carbide Schottky Diode

The FFSB1065B is a silicon carbide Schottky diode rated for 650 V and 10 A, designed for high efficiency power switching applications like SMPS, solar inverters, and UPS. Its innovative SiC technology offers superior switching performance, no reverse recovery, and excellent thermal reliability, enabling faster switching, higher power density, reduced EMI, and system size. Key features include avalanche rated at 49 mJ, maximum junction temperature of 175°C, high surge current capacity, positive temperature coefficient, and ease of paralleling. Its compact D2PAK-2 package ensures reliable operation in demanding environments, making it suitable for industrial and renewable energy systems.

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Source:DigiKey
Part No:FFSB1065B
Stock:547
Inv Date:06-10-2026
Price: Unit price: $4.39
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Part No:FFSB1065B
Stock:491
Inv Date:06-11-2026
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Part No:FFSB1065B
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.2
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Part No:FFSB1065B
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.2
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Part No:FFSB1065B
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.45
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Part No:FFSB1065B
Stock:800
Inv Date:06-11-2026
Price: N/A
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ONSEMI FFSB1065B Silicon Carbide Schottky Diode Specifications:

  • Voltage Rating: 650 V
  • Continuous Rectified Forward Current: 10 A @ Tg < 146°C
  • Peak Repetitive Reverse Voltage: 650 V
  • Avalanche Rated Energy: 49 mJ
  • Maximum Junction Temperature: 175°C
  • Power Dissipation: 79 W @ 25°C, 13 W @ 150°C
  • Thermal Resistance: Junction to Case 1.9 °C/W
  • Forward Voltage: 1.7 V at 10 A, 25°C
  • Reverse Current: 40 µA at 650 V, 25°C
  • Operating Temperature Range: -55°C to +175°C
  • Package: D2PAK-2 (TO-263, 2-Leads)
  • Surge Current: 650 A at 25°C, 10 µs
  • Capacitance: 46 pF at 200 V, 100 kHz
  • Total Capacitance: 25 nC at 400 V

Buy the Buy ON Semiconductor FFSB1065B Part Number 650 V 10A Silicon Carbide Schottky Diode Online

Discover the advanced performance of the Silicon Carbide Schottky Diode, rated 650 V and 10 A, engineered for high-efficiency switching in power systems. This diode offers excellent thermal performance, no reverse recovery, and rapid switching, making it ideal for SMPS, solar inverters, UPS, and industrial power circuits. Its avalanche rating of 49 mJ and maximum junction temperature of 175°C ensure reliability in demanding environments. Purchase online today for a robust, energy-efficient component that can reduce size, EMI, and system costs, ensuring optimal system performance and longevity.

Order your ON Semiconductor FFSB1065B high-performance SiC Schottky diode today and enhance your power electronics with superior efficiency, thermal reliability, and fast switching capability.

Frequently Asked Questions

Where can I buy ONSEMI FFSB1065B?

You can click on the BUY or RFQ button to purchase FFSB1065B from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FFSB1065B?

You can download the FFSB1065B datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FFSB1065B?

ONSEMI

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