Silicon Carbide Schottky Diode offers superior switching performance and high thermal reliability compared to Silicon. With zero reverse recovery and temperature-independent switching, it delivers system benefits like high efficiency, faster frequency, increased power density, and reduced EMI, system size, and cost. Rated for 650V and 30A, it features high surge current capacity, positive temperature coefficient, and is RoHS and halogen free. Ideal for power switching, SMPS, solar inverters, and UPS applications, it ensures excellent thermal and electrical performance in demanding environments.
Continuous Rectified Forward Current: 30 A at Tg < 25°C
Peak Forward Surge Current: 1100 A at 25°C
Avalanche Rated Energy: 144 mJ
Max Junction Temperature: 175°C
Power Dissipation: 246 W at 25°C
Thermal Resistance, Junction to Case: 0.61 °C/W
Operating Temperature Range: -55 to +175°C
Forward Voltage: 1.38 V at 30 A, 25°C; up to 1.72 V at 175°C
Reverse Current: 40 μA at 25°C, 120 μA at 175°C
Capacitance: 1280 pF at 1 V, 100 kHz
Device Package: D2PAK-2 (TO-263, 2 lead case)
Buy the ON Semiconductor Series FFSB Silicon Carbide Schottky Diode: FFSB3065B
Purchase the Silicon Carbide Schottky Diode FFSB3065B from ON Semiconductor online now to ensure superior switching performance and exceptional thermal reliability. This high-voltage, high-current diode is ideal for power switching, inverters, solar applications, and UPS systems. With its advanced SiC technology, it provides faster operation, higher system efficiency, reduced EMI, and compact design, addressing demanding industrial and renewable energy needs. Take advantage of quick online ordering for reliable delivery and start optimizing your power systems today.
Buy ON Semiconductor FFSB3065B now and experience unmatched reliability and high efficiency in power switching applications with advanced SiC technology.
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ONSEMI
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