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ONSEMI FDA59N25 High-Voltage N-Channel MOSFET

The FDA59N25 is an N-channel MOSFET built using high-voltage planar stripe and DMOS technology. Designed to minimize ON-state resistance, it offers improved switching performance and higher avalanche energy durability. Ideal for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts. Features include a typical low gate charge of 63nC, a typical low gate-to-drain charge (Crss) of 70pF, and full avalanche testing to ensure reliability. Note that market demand has extended lead times, and delivery dates may vary. The product is exempt from discounts.

Authorized Distributors
Source:Newark
Part No:FDA59N25
Stock:1841
Inv Date:06-10-2026
Price: Unit price: $4.59
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Part No:FDA59N25
Stock:14550
Inv Date:06-11-2026
Price: Unit price: $4.81
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Part No:FDA59N25
Stock:0
Inv Date:06-11-2026
Price: Unit price: $2.67
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Part No:FDA59N25
Stock:0
Inv Date:06-11-2026
Price: Unit price: $2.67
Buy/RFQ:
Part No:FDA59N25
Stock:0
Inv Date:06-10-2026
Price: Unit price: $2.6
Buy/RFQ:
Part No:FDA59N25
Stock:10
Inv Date:06-11-2026
Price: N/A
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ONSEMI FDA59N25 High-Voltage N-Channel MOSFET Specifications:

  • Drain to Source Voltage: 250 V
  • Continuous Drain Current at 25°C: 59 A
  • Pulsed Drain Current: 236 A
  • Gate to Source Voltage: ±30 V
  • Gate Threshold Voltage: 30 V
  • Gate Charge (Qgs): 185 nC
  • On-Resistance (Rds(on)): 0.049 Ω at Vgs = 10 V
  • Output Capacitance (Coss): 630 pF
  • Input Capacitance (Cis): 4020 pF
  • Thermal Resistance Junction to Ambient: 40 °C/W
  • Operating and Storage Temperature Range: -55°C to +150°C
  • Max Power Dissipation: 3 W
  • Maximum Lead Soldering Temperature: 300°C for 5 seconds
  • Repetitive Avalanche Voltage: 300 V
  • Avalanche Energy (single pulse): 1458 mJ

Buy the ON Semiconductor Series FDA Series N-Channel MOSFET: FDA59N25

Purchase the ON Semiconductor FDA59N25 high-voltage N-channel MOSFET online now to secure a component designed for power converters, offering low gate charge, high avalanche energy capability, and robust switching performance. Perfect for applications like PFC, flat panel display power supplies, ATX power supplies, and lamp ballasts. This device features a 250 V drain-source voltage, continuous drain current of 59 A, pulsed current of 236 A, and full avalanche testing for durability. Buy now to enhance your electronic power systems with trust and efficiency.

Order your ON Semiconductor Series FDA59N25 high-voltage MOSFET today and ensure reliable switching performance for your power conversion projects.

Frequently Asked Questions

Where can I buy ONSEMI FDA59N25?

You can click on the BUY or RFQ button to purchase FDA59N25 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDA59N25?

You can download the FDA59N25 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDA59N25?

ONSEMI

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