Silicon Carbide Schottky Diode offers superior switching performance, high reliability, and thermal efficiency for power applications. Designed for high voltage and current handling, it features no reverse recovery and a positive temperature coefficient. Ideal for SMPS, solar inverters, UPS, and power switching circuits, this diode provides system benefits like increased efficiency, faster switching, and smaller system size. With a maximum junction temperature of 175°C and avalanche rating of 80 mJ, it balances high-power density with thermal stability, making it suitable for demanding power management systems.
Continuous Rectified Forward Current @ Tc < 168°C: 8 A
Maximum Continuous Forward Current @ Tc < 135°C: 22.5 A
Peak Forward Surge Current (10 us): 480 A
Repetitive Forward Surge Current (8.3 ms): 45 A
Power Dissipation (To = 25°C): 26 W
Power Dissipation (To = 150°C): 44 W
Operating and Storage Temperature Range: -55°C to +175°C
Thermal Resistance, Junction to Case: 0.57°C/W
Buy the Buy ON Semiconductor Silicon Carbide Schottky Diode Part Number FFSD08120A Online
Purchase the ON Semiconductor Silicon Carbide Diode FFSD08120A online today for superior power performance, high voltage and current ratings, and thermal efficiency. This diode is ideal for applications requiring fast switching with no reverse recovery, such as SMPS, solar inverters, and UPS systems. Its robust design ensures high reliability, a maximum junction temperature of 175°C, and avalanche rating of 80 mJ. Enjoy easy online ordering and benefit from prompt delivery to enhance your power management systems efficiently.
Get ON Semiconductor FFSD08120A today—designed for high-power efficiency, thermal stability, and reliable power switching performance in demanding applications.
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