Silicon Carbide Schottky Diode offering 650 V and 30A, featuring superior switching performance, high thermal efficiency, and high surge capacity. Ideal for power switching, SMPS, solar inverters, and UPS applications, it operates up to 175°C. Its avalanche rated at 180 mJ and low reverse recovery current ensure high efficiency and reliability in demanding environments. Designed for systems requiring high power density, reduced EMI, and compact size, this diode is Pb-Free and ROHS compliant, suitable for next-generation power electronics requiring fast switching and thermal stability.
ONSEMI FFSH3065A Silicon Carbide Power Diode Specifications:
Peak Repetitive Reverse Voltage: 650 V
Single Pulse Avalanche Energy: 180 mJ
Forward Current: 30 A at Tc<121°C
Peak Forward Surge Current: 1125 A at 25°C
Operating Temperature Range: -55°C to +175°C
Maximum Junction Temperature: 175°C
Thermal Resistance, Junction to Case: 0.58°C/W
Power Dissipation: 259 W at 25°C, 43 W at 150°C
Capacitance: 1705 pF at 1V, 100 kHz
Reverse Current: 200 A at 650 V, 25°C; 600 A at 175°C
Device Case: TO-247-2LD, Package 340CL
RoHS and Pb-Free compliant
Maximum Junction Temperature: 175°C
Buy the Buy ON Semiconductor FFSH3065A Power Diode Part Number FFSH3065A Online
Purchase the ON Semiconductor FFSH3065A Silicon Carbide Power Diode online today and elevate your power management systems. This robust diode handles 650 V and 30A with exceptional thermal performance, making it perfect for SMPS, solar inverters, and UPS applications. Its high surge capacity, zero reverse recovery, and RoHS compliance ensure high reliability and efficiency in demanding environments. Benefit from fast switching, reduced EMI, system miniaturization, and increased power density. Order now to improve system performance with a durable, high-quality power component designed for future-ready electronics.
Order your ON Semiconductor FFSH3065A Silicon Carbide Schottky Diode today and enhance your power circuitry with high efficiency and reliability for demanding applications.
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