The FFSM865B is a silicon carbide Schottky diode rated at 650V and 8A, optimized for power switching applications such as SMPS, solar inverters, and UPS systems. Its advanced SiC technology ensures superior switching performance, zero reverse recovery, and high thermal reliability, enabling higher efficiency, faster switching speeds, and system miniaturization. The device features a peak junction temperature of 175°C, avalanche rated at 33mJ, and is Pb-Free, halogen-free, and RoHS compliant. The compact PQFN 8x8 package enhances thermal management and ease of paralleling in high-frequency power circuits.
Purchase the ON Semiconductor FFSM865B silicon carbide power diode online now to benefit from superior switching efficiency, high surge capacity, and compact packaging. This advanced SiC diode offers excellent thermal performance and is ideal for high-frequency power circuits like SMPS, solar inverters, and UPS systems. Its features include a peak junction temperature of 175°C, avalanche rating of 33mJ, RoHS compliance, and a robust PQFN 8x8 package for easy integration. Ensure your projects meet demanding power and efficiency standards by ordering today.
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You can download the FFSM0865B datasheet or visit the ONSEMI website for support.
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