The FQB55N10 is a QFET® N-channel enhancement-mode Power MOSFET manufactured using planar stripe and DMOS technology. Designed to minimize on-state resistance, it offers excellent switching performance and high avalanche energy capability. This device is ideal for use in switched-mode power supplies, active power factor correction (PFC) circuits, and electronic lamp ballasts. It is 100% avalanche tested, with a typical gate charge of 75 nC and a typical reverse transfer capacitance (Crss) of 130 pF. Due to high market demand, lead times may be extended, and delivery dates are subject to fluctuation. The product is exempt from discounts.
Order the Fairchild FQB55N10 Power MOSFET online today and enhance your power supply designs with a robust, high-current, high-voltage device. Perfect for switched-mode power supplies, active PFC circuits, and electronic ballasts, this MOSFET offers low on-resistance, excellent switching performance, and high avalanche energy. Its 100% avalanche-tested quality ensures durability and reliability across demanding industrial applications. Purchase now to benefit from fast delivery, genuine quality, and technical support, ensuring your project’s success and long-term reliability.
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You can download the FQB55N10 datasheet or visit the ONSEMI website for support.
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