This high-performance P-Channel MOSFET is designed using Fairchild’s proprietary DMOS technology, offering low on-resistance, fast switching, and high avalanche energy capacity. It is ideal for high-efficiency switching in DC/DC converters, capable of withstanding high avalanche and avalanche pulse conditions. With a maximum drain-source voltage of -200V, continuous drain currents of 3A at 25°C and 46A at 100°C, and a gate charge of 19nC, this device ensures reliable operation in demanding power applications, complemented by RoHS compliance and qualified for automotive standards.
Switching Times: Turn-On delay 40 ns, Rise time 110-230 ns, Turn-Off delay 70 ns, Fall time 90 ns
Body Diode Forward Voltage: Approx. 50 V at 7.3 A
Package: TO-220
Buy the Buy FAIRCHILD P-Channel MOSFET Part Number FQB7P20TMF085 Online
Order the FAIRCHILD FQB7P20TMF085 P-Channel MOSFET online to benefit from advanced DMOS technology, delivering low on-resistance, fast switching, and high avalanche energy capacity. Perfect for high-efficiency switching in DC/DC converters, it supports demanding applications with a maximum drain-source voltage of -200V and a continuous drain current of 3A at 25°C. Its rugged design withstands high avalanche pulses, ensuring reliable operation, RoHS compliance, and automotive qualification. Purchase now for superior power management and peak performance.
Buy FAIRCHILD FQB7P20TMF085 now and experience unmatched reliability and high-efficiency power switching with excellent avalanche capacity and low gate charge.
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