This N-Channel enhancement mode power MOSFET features a drain-source voltage of 500 V and a continuous drain current of 9 A. Designed using proprietary planar stripe and DMOS technology, it offers low gate charge (typical 28 nC), low Crss (typical 24 pF), and is 100% avalanche tested. Suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts, it provides superior switching performance, high avalanche energy strength, and reduced on-state resistance for efficient power management.
Purchase the Fairchild FQB9N50C power MOSFET online to ensure you receive a high-quality, reliable component suitable for demanding power supply and lighting systems. This advanced N-Channel enhancement mode device features a 500 V drain-source voltage, 9 A continuous drain current, low gate charge, and excellent avalanche energy strength. Its superior switching performance, low on-resistance, and robust thermal characteristics make it ideal for modern electronic power management solutions. Order now for fast delivery and support.
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You can download the FQB9N50CTM datasheet or visit the ONSEMI website for support.
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