This N-Channel enhancement mode power MOSFET features 600 V and 1.0 A current capacity, optimized for switch mode power supplies, active power correction, and electronic lamp ballasts. Built with ON Semiconductor's proprietary planar stripe and DMOS technology, it offers low on-state resistance, superior switching performance, and high avalanche energy strength. Its RoHS compliance ensures environmentally friendly manufacturing. The device includes features like low gate charge, low Crss, and 100% avalanche testing, making it suitable for high-voltage, high-speed switching applications in industrial and power management systems.
Experience the superior switching and high-voltage capability of the ON Semiconductor FQD1N60C power MOSFET. Designed with low gate charge and excellent avalanche energy strength, this device is ideal for switch mode power supplies, active PFC circuits, and electronic ballast applications. Its robust construction ensures stability across a wide temperature range, while RoHS compliance guarantees environmentally responsible manufacturing. Purchase online now to incorporate this high-performance MOSFET into your power management systems for enhanced efficiency and reliability.
You can click on the BUY or RFQ button to purchase FQD1N60CTM from an authorized ONSEMI distributor.
You can download the FQD1N60CTM datasheet or visit the ONSEMI website for support.
ONSEMI