This N-Channel enhancement mode power MOSFET from Fairchild offers a drain-source voltage of 100 V and a continuous drain current of 5.8 A, designed for switching power supplies, audio amplifiers, and motor control applications. It features low gate charge and superb switching performance, with a maximum Rds(on) of 350 mΩ at Vgs = 10 V, ensuring energy efficiency. The device is produced using proprietary planar stripe and DMOS technology, providing high avalanche energy strength and reliability for demanding electronic systems.
Operating and Storage Temperature Range: -55°C to +150°C
Thermal Resistance, Junction to Case: 5.0°C/W
Thermal Resistance, Junction to Ambient: Max. 110°C/W with proper heat sinking
Dimensions: Case D-PAK, 3 leads, typical size approximately 4.60 mm x 4.32 mm
RoHS Compliant: Yes
Buy the Fairchild FQD7N10L – Reliable MOSFET for Industrial Applications
Purchase the Fairchild FQD7N10L online now and enhance your power electronic circuits. With a voltage rating of 100 V and a continuous current of 5.8 A, this MOSFET guarantees efficient and dependable switching performance. Its low gate charge and high avalanche energy make it suitable for various industrial, consumer, and automotive applications, ensuring optimal power management. Delivered in a compact D-PAK package, this device is easy to incorporate into your designs for reliable and long-lasting operation.
Get Fairchild FQD7N10L today—built for precision, high switching performance, and long-lasting durability in power management systems.
Frequently Asked Questions
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