This N-Channel enhancement mode power MOSFET features a 500 V drain-source voltage, 12.5 A continuous drain current, and a low on-resistance of 430 mΩ. Designed with proprietary planar stripe and DMOS technology, it offers superior switching performance and high avalanche energy strength, making it ideal for switched mode power supplies, active power factor correction, and electronic lamp ballasts. The device is 100% avalanche tested, ensuring reliability under demanding switching conditions, and is packaged in a TO-220 package for easy integration into power electronic systems.
Purchase the ON Semiconductor power MOSFET FQP13N50 online and benefit from its high voltage capacity, low on-resistance, and robust avalanche energy. Designed for demanding power supply applications and lighting ballast systems, this device offers outstanding reliability and performance. Easy to install in TO-220 packages, it ensures efficient switching and thermal management, making it suitable for engineers and technicians seeking durable and high-performance power components. Buy now to improve your power electronic designs with this proven, high-quality MOSFET.
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You can download the FQP13N50 datasheet or visit the ONSEMI website for support.
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