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ONSEMI FQP27P06 Power MOSFET

This P-Channel enhancement mode power MOSFET is built using proprietary planar stripe and DMOS technology, offering reduced on-state resistance, superior switching performance, and high avalanche energy strength. Suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. It features a maximum drain-source voltage of -60 V, continuous drain current of 27 A, low gate charge of 33 nC, and a maximum junction temperature of 175°C, ensuring high efficiency and reliability in power management designs.

Authorized Distributors
Source:Newark
Part No:FQP27P06
Stock:79468
Inv Date:06-10-2026
Price: Unit price: $0.785
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Source:DigiKey
Part No:FQP27P06
Stock:13476
Inv Date:06-10-2026
Price: Unit price: $2.92
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Source:DigiKey
Part No:FQP27P06
Stock:1941
Inv Date:06-10-2026
Price: Unit price: $1.76
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Part No:FQP27P06
Stock:6276
Inv Date:06-11-2026
Price: Unit price: $2.92
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Part No:FQP27P06
Stock:3400
Inv Date:06-10-2026
Price: Unit price: $1.054
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Part No:FQP27P06
Stock:3400
Inv Date:06-10-2026
Price: Unit price: $1.054
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Part No:FQP27P06
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.07
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Source:Arrow EU
Part No:FQP27P06
Stock:2128
Inv Date:06-11-2026
Price: N/A
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Part No:FQP27P06
Stock:2500
Inv Date:06-11-2026
Price: N/A
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ONSEMI FQP27P06 Power MOSFET Specifications:

  • Drain-Source Voltage: -60 V
  • Drain Current (Continuous): 27 A at 25°C, 19.1 A at 100°C
  • Drain Current (Pulsed): -108 A
  • Gate-Source Voltage: +25 V
  • Single Pulsed Avalanche Energy: 560 mJ
  • Repetitive Avalanche Energy: 12 mJ
  • Power Dissipation: 120 W at 25°C, derates above 25°C
  • Maximum Junction Temperature: 175°C
  • Thermal Resistance Junction-to-Case: 1.25 °C/W
  • Thermal Resistance Case-to-Sink: 0.5 °C/W
  • Thermal Resistance Junction-to-Ambient: Max 62.5 °C/W
  • Gate Threshold Voltage: -20 to 40 V
  • Static Drain-Source On-Resistance: 0.055 Ω at -10 V Gate
  • Input Capacitance: 1100 pF
  • Output Capacitance: 510 pF
  • Reverse Transfer Capacitance: 120 pF
  • Switching Times (Turn-On/Off): 185-380 ns / 90-190 ns
  • Total Gate Charge: 18- nC
  • Body Diode Forward Voltage: Up to 40 V
  • Maximum Lead Soldering Temperature: 300°C for 5 seconds

Buy the ON Semiconductor Series Power MOSFET: FQP27P06

Purchase ON Semiconductor FQP27P06 Power MOSFET online today for reliable power switching in your electronic projects. Designed with low gate charge and high avalanche energy, it ensures excellent efficiency in power supplies, motor controls, and audio amplifiers. Suitable for demanding environments, this high-performance device provides robust operation at maximum junction temperatures of 175°C. Easy to incorporate into your design, the FQP27P06 guarantees durability and superior electrical characteristics, helping you achieve optimal system performance and energy efficiency. Buy now to enhance your power management solutions.

Get ON Semiconductor FQP27P06 today—built for precision and long-lasting durability in power switching applications.

Frequently Asked Questions

Where can I buy ONSEMI FQP27P06?

You can click on the BUY or RFQ button to purchase FQP27P06 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FQP27P06?

You can download the FQP27P06 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FQP27P06?

ONSEMI

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