The FQPF22P10 is a P-Channel enhancement mode power MOSFET designed for switch mode power supplies, motor control, and audio amplification. It features a maximum drain-source voltage of -100 V and a continuous drain current of -13.2 A. The device offers low gate charge of 40 nC, low on-resistance of 0.125 Ω, and is 100% avalanche tested, ensuring high reliability. Operating up to 175°C junction temperature, it provides superior switching performance and energy efficiency. Its construction uses proprietary DMOS technology for reduced resistance and high avalanche energy strength, suitable for demanding power applications.
Experience superior power switching with the Fairchild Series FQPF22P10 Power MOSFET. Featuring a -100 V drain-source voltage, -13.2 A continuous drain current, low gate charge of 40 nC, and avalanche testing, this device ensures high reliability in power supplies, motor control, and audio amplifiers. Its advanced DMOS technology reduces on-resistance, improves switching efficiency, and withstands high avalanche energy. Ideal for demanding industrial applications, this MOSFET improves energy efficiency and operational stability in your electronic designs, available for quick purchase online.
You can click on the BUY or RFQ button to purchase FQPF22P10 from an authorized ONSEMI distributor.
You can download the FQPF22P10 datasheet or visit the ONSEMI website for support.
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