The FQB9P25 is a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. It features low gate charge of 29 nC, low Crss of 27 pF, and is 100% avalanche tested, making it ideal for high-efficiency switching applications such as DC/DC converters. With a drain-source voltage of -250 V and continuous drain current of 9.4 A, it delivers superior switching performance and energy handling capabilities. Its robust construction supports high pulse energy, ensuring reliable operation in demanding power management circuits.
Buy the Fairchild FQB9P25 Power MOSFET online today to ensure your high-efficiency switching applications have reliable, high-performance components. This P-Channel enhancement mode device offers a drain-source voltage of -250 V and continuous drain current of 9.4 A, making it suitable for demanding power management, DC/DC converters, and inverter circuits. Its low gate charge of 29 nC, avalanche testing, and excellent thermal characteristics deliver durability and superior switching performance. Purchase online now for quick delivery and support optimized for demanding electronic projects and professional engineering requirements.
You can click on the BUY or RFQ button to purchase FQB9P25TM from an authorized ONSEMI distributor.
You can download the FQB9P25TM datasheet or visit the ONSEMI website for support.
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