The HGTG12N60A4D is a 600V N-channel IGBT with an anti-parallel hyper-fast diode, combining high input impedance of MOSFETs with low on-state conduction loss of bipolar transistors. Optimized for high-frequency switch mode power supplies, it offers reduced conduction and switching losses and operates efficiently across a wide temperature range from -55°C to +150°C. Suitable for high-voltage switching, it features a fall time of approximately 70 nanoseconds at 125°C, making it ideal for industrial, consumer, and power conversion applications requiring reliable high-voltage switching with low energy dissipation.
ONSEMI HGTG12N60A4D High Voltage IGBT Module Specifications:
Collector to Emitter Voltage: 600V
Collector Current Continuous: 60A at 25°C
Collector Current Pulsed: 167A
Gate to Emitter Voltage Continuous: ±30V
Gate to Emitter Voltage Pulsed: ±30V
Switching Safe Operating Area at Ty: 60A
Power Dissipation Total at Tc: 300W
Operating Junction Temperature Range: -55°C to +150°C
Maximum Soldering Temperature: 260°C for 10s
Fall Time: approximately 70ns at 125°C
Turn-On Delay Time: approximately 17ns at 25°C
Turn-Off Delay Time: approximately 96ns at 25°C
Gate Charge (Qgon): 78-96nC at 12A
Collector to Emitter Breakdown Voltage: 600V
Gate to Emitter Threshold Voltage: around 5.6V
Recovery Times: about 30-18ns depending on conditions
Buy the Buy ON Semiconductor HGTG12N60A4D Part Number HGTG12N60A4D Online
Order ON Semiconductor HGTG12N60A4D today to benefit from its robust 600V rating, low conduction and switching losses, and fast switching times. Perfect for high-frequency power supplies, industrial inverters, and motor drives, this IGBT module ensures efficient power switching with minimal energy dissipation. Its wide operating temperature range from -55°C to +150°C makes it highly versatile in demanding environments. Designed for reliable performance and enhanced EMI characteristics, this device is essential for engineers seeking durable, high-performance power switching components for industrial and automation applications.
Get ON Semiconductor HGTG12N60A4D today—built for high-voltage switching, high efficiency, and reliable industrial power applications.
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