The FCPF260N60E is a high-voltage N-channel SuperFET II power MOSFET designed for demanding power switching applications such as LED, LCD, PDP TV lighting, and solar inverters. It features a drain-source voltage of up to 600 V, low on-resistance of 0.022 Ω, and a gate charge of 48 nC, providing efficient switching performance. This device is avalanche tested, incorporates an integrated gate resistor, and complies with RoHS standards, ensuring reliability and compliance in complex electronic systems.
Static Drain to Source On Resistance: 0.022 Ω (Typ.)
Thermal Resistance, Junction to Ambient: 62.5 °C/W
Operating Temperature Range: -55°C to +150°C
Maximum Power Dissipation: 5.3 W at 25°C
Maximum Lead Soldering Temperature: 300°C for 5 seconds
RoHS Compliant
Package: TO-220F with optional support pin hole
Includes integrated gate resistor, avalanche tested, designed for high efficiency power switching applications
Buy the Fairchild Series SuperFET II MOSFET: FCPF260N60E
Purchase the Fairchild FCPF260N60E high-voltage power MOSFET online today. Designed for efficient switching in power supplies, inverters, and lighting. This device features a drain-source voltage of 600 V, low on-resistance, and high avalanche energy with avalanche testing for added reliability. Its integrated gate resistor makes it easier to implement in your circuit, ensuring optimal performance and minimal EMI. Order now for rapid delivery and technical support to meet your project's power and efficiency needs.
Get Fairchild FCPF260N60E today—built for high voltage power switching and reliable performance in demanding applications.
Frequently Asked Questions
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