The PNP epitaxial silicon transistor is ideal for electronic circuits demanding reliable switching and signal amplification. Designed for high-performance applications, it ensures excellent signal integrity and efficient power handling. Suitable for audio frequency power amplification and low-speed switching, this transistor features a collector-emitter voltage of -30 V, collector current of -3 A, and high DC current gain up to 220. It offers robust thermal stability, with a junction temperature of 150°C and a collector dissipation of 10 W. Its compact TO-126 package makes it suitable for various electronic modules and devices requiring precise control and durability.
ONSEMI KSB772YSTU Power Transistor Specifications:
V collector-base: -40 V
V collector-emitter: -30 V
V emitter-base: -5 V
Collector current (DC): -3 A
Collector current (Pulse): -7 A
Base current (DC): -0.6 A
Collector dissipation: 10 W at 25°C
Junction temperature: 150°C
Power dissipation: 10 W
Power junction to ambient: 132°C/W
Gain bandwidth product: 80 MHz
Collector-saturation voltage: 0.3 - 0.5 V
Base-emitter saturation voltage: 1.0 - 2.0 V
Collector cut-off current: -1 μA at -30 V, 0 Ip
DC current gain: 30 to 220
Charge stored: 55 pF
Package: TO-126
Buy the Buy ON Semiconductor KSB772YSTU Part Number KSB772YSTU Online
Enhance your electronic projects with the ON Semiconductor Power Transistor. Engineered for high performance, it offers reliable switching, high current gain, and thermal stability. Perfect for audio frequency power amplification, it handles up to 10 W dissipation and operates efficiently within a junction temperature of 150°C. This TO-126 package transistor ensures durability and precision control in power and signaling applications. Purchase online today to integrate this robust component into your electronic systems for superior performance and long-lasting operation.
Get ON Semiconductor KSB772YSTU today—built for reliable switching and efficient power amplification.
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