The M1MA151WAT1 and M1MA152WAT1 are high-speed silicon epitaxial planar dual diodes designed for ultra fast switching applications in compact surface-mount SC-59 packages. These low-capacitance diodes feature reverse recovery times under 10 ns, low junction capacitance of less than 15 pF, and support peak forward currents up to 340 mA. Suitable for high-frequency switching, they offer excellent reliability in power management and signal conversion, with Pb-Free variants available. Operating with reverse voltages up to 80 V, they ensure efficient performance in demanding electronic circuits for various industrial and consumer electronics.
Peak Reverse Voltage: 40 V for M1MA151WAT1, 80 V for M1MA152WAT1
Forward Current: up to 150 - 340 mA
Peak Forward Surge Current: 500 - 750 mA
Power Dissipation: 200 mW
Junction Temperature: 150°C
Storage Temperature Range: -55°C to +150°C
Reverse Recovery Time: less than 10 ns
Capacitance: less than 15 pF
Package: SC-59 surface-mount
Lead-Free: Yes
Mechanical Dimensions: Standard SC-59 footprint, length approximately 1.6 mm, width approximately 1.6 mm, height approximately 1 mm
Maximum operating temperature: 150°C
Insulation Resistance: Suitable for high-speed switching circuits
Buy the ON Semiconductor Series Dual High-Speed Diodes: M1MA152WAT1G
Get the ON Semiconductor M1MA152WAT1G high-speed dual silicon diode now. Designed for ultra fast switching, these diodes support high-frequency applications with low capacitance and excellent reliability. Featuring reverse voltages up to 80 V, forward currents up to 340 mA, and a tiny SC-59 package, they are ideal for power management and fast signal switching in compact electronics. Purchase online today to benefit from fast delivery, competitive pricing, and trusted quality for your industrial and consumer electronic projects.
Order your ON Semiconductor Series Dual High-Speed Diodes today and ensure reliable, ultra fast switching performance in your electronic designs.
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