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ONSEMI MBR1100G Schottky Barrier Rectifier

The MBR1100G is an axial-lead Schottky diode with an epoxy-molded case designed for low-voltage, high-frequency power applications, including rectifiers, free-wheeling diodes, and polarity protection diodes. It features epitaxial construction with oxide passivation and a metal overlap for enhanced stability, low reverse current, and low stored charge for high efficiency. The diode offers low forward voltage, high surge capacity, corrosion-resistant surfaces, and stress-protection guard-ring, making it ideal for power management and industrial electronics. Operating at junction temperatures up to 175°C, it provides reliable, high-performance rectification with excellent thermal characteristics.

Authorized Distributors
Source:Newark
Part No:MBR1100G
Stock:10100
Inv Date:06-10-2026
Price: Unit price: $0.106
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Part No:MBR1100G
Stock:2456
Inv Date:06-11-2026
Price: Unit price: $0.69
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Part No:MBR1100G
Stock:3000
Inv Date:06-11-2026
Price: Unit price: $0.1108
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Part No:MBR1100G
Stock:3000
Inv Date:06-11-2026
Price: Unit price: $0.1108
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Part No:MBR1100G
Stock:4683
Inv Date:06-10-2026
Price: Unit price: $0.125
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Part No:MBR1100G
Stock:4318
Inv Date:06-11-2026
Price: N/A
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ONSEMI MBR1100G Schottky Barrier Rectifier Specifications:

  • Case: Epoxy, Molded
  • Lead Material: Metal-to-silicon power diode
  • Operating Junction Temperature: up to 175°C
  • Peak Repetitive Reverse Voltage: 100 V
  • Average Rectified Forward Current: 1.0 A
  • Peak Repetitive Forward Current: 2.0 A
  • Non-Repetitive Peak Surge Current: 50 A
  • Reverse Current at 25°C: 0.5 mA
  • Reverse Current at 100°C: 5.0 mA
  • Forward Voltage at 1A: 0.79 V (25°C), 0.69 V (100°C)
  • Thermal Resistance Junction-to-Ambient: see Note 3
  • Lead Temperature for Soldering: Max 260°C for 10 seconds
  • Dimensions: Standard axial-lead case, 1.0 A and 100 V ratings
  • Features: Guard-ring for stress protection, oxide passivation, corrosion-resistant external surfaces, low forward voltage, high surge capacity

Buy the ON Semiconductor Series Schottky Barrier Rectifier: MBR1100G

Purchase the ON Semiconductor MBR1100G online today and enhance your power circuits with high-efficiency rectification. This axial-lead Schottky diode features epitaxial construction, oxide passivation, and a metal overlap contact for superior stability and low reverse current. Designed for low-voltage, high-frequency applications, it offers a low forward voltage, high surge capacity, corrosion resistance, and stress protection guard-ring. Perfect for power supply circuits, inverters, and polarity protection, ensuring reliable performance in demanding environments. Order now for fast shipping and quality assurance.

Buy ON Semiconductor MBR1100G now and experience unmatched reliability and high-efficiency rectification for power management and industrial applications.

Frequently Asked Questions

Where can I buy ONSEMI MBR1100G?

You can click on the BUY or RFQ button to purchase MBR1100G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MBR1100G?

You can download the MBR1100G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MBR1100G?

ONSEMI

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