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ONSEMI MC33151DR2G High Speed MOSFET Driver

The MC33151V is a high-speed dual inverting driver designed for low current digital circuitry to efficiently drive power MOSFETs. Constructed with Schottky clamped Bipolar Analog technology, it offers fast switching, rugged performance, and compatibility with CMOS and LSTTL logic families. It features two independent channels with 1.5 A totem pole outputs, input hysteresis for fast switching, undervoltage lockout with hysteresis, low standby current, and high-frequency operation. Ideal for switching power supplies, motor controllers, and inverter circuits, it ensures reliable and efficient MOSFET switching with minimal ringing and power dissipation.

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Source:Newark
Part No:MC33151DR2G
Stock:1080
Inv Date:06-10-2026
Price: Unit price: $1.84
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Part No:MC33151DR2G
Stock:4496
Inv Date:06-11-2026
Price: Unit price: $1.84
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Part No:MC33151DR2G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.79
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Part No:MC33151DR2G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.683
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Part No:MC33151DR2G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.683
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Part No:MC33151DR2G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.81
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Source:Arrow EU
Part No:MC33151DR2G
Stock:7500
Inv Date:06-11-2026
Price: N/A
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ONSEMI MC33151DR2G High Speed MOSFET Driver Specifications:

  • Maximum Power Dissipation @ Ta = 50°C: Pp 1.0 W (SOIC-8 Package)
  • Power Supply Voltage: Up to 20 V
  • Output Current: 1.5 A (source/sink)
  • Output Rise and Fall Times: 15 ns with 1000 pF load
  • Input Threshold Voltage: 1.67 V (centered), hysteresis 170 mV
  • Input Current - High State: 200-500 μA, Low State: 20-100 μA
  • Operating Typ. Vcc: 12 V, Range: 5.3 V to 20 V
  • Switching Delays: 35-36 ns (typ.) for rise and fall times
  • Operating Temperature Range: -40°C to +125°C depending on variant
  • Thermal Resistance, Junction to Air: 180°C/W (SOIC-8)
  • Undervoltage Lockout Threshold: Upper 5.8 V, Lower 5.3 V with hysteresis
  • Drive Output Voltage: Low state approximately 0.1 V at 10 mA, high state approximately 11 V at 10 mA
  • Output protection: Clamps against positive and negative transients
  • Package types: SOIC-8, PDIP-8, with Pb-Free options
  • ESD sensitivity: 2000 V HBM

Buy the ON Semiconductor Series High Speed Dual MOSFET Driver: MC33151DR2G

Order the ON Semiconductor MC33151DR2G today to enhance your electronic design with high-speed dual MOSFET driver capabilities. Featuring 1.5 A totem pole outputs, input hysteresis for fast switching, undervoltage lockout with hysteresis, and low power consumption, this device is perfect for switching power supplies, motor controllers, and inverter applications. Its rugged construction with Schottky clamp technology ensures reliable operation even in industrial environments. Compact and Pb-Free packaging makes integration straightforward and environmentally friendly. Experience improved system performance and efficiency—buy online now and elevate your designs with confidence.

Get ON Semiconductor MC33151DR2G today—built for high-speed switching and reliable power MOSFET drive in compact form factors.

Frequently Asked Questions

Where can I buy ONSEMI MC33151DR2G?

You can click on the BUY or RFQ button to purchase MC33151DR2G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MC33151DR2G?

You can download the MC33151DR2G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MC33151DR2G?

ONSEMI

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