The MJD44H11T4G is a complementary NPN power transistor designed for high-current power switching applications. Suitable for output or driver stages in converters, switching regulators, and power amplifiers, it features fast switching speeds, low saturation voltage, and surface-mount DPAK packaging for easy assembly. The device's robust construction ensures reliable operation with 80V collector-emitter voltage, 8A continuous current, and 20W power dissipation. It is RoHS compliant, Pb-Free, halogen-free, and ideal for automotive and industrial applications requiring high efficiency and durability.
ONSEMI MJD44H11T4G Power Transistor Specifications:
Collector-Emitter Voltage: 80 V
Collector Current: 8 A
Power Dissipation: 20 W
Thermal Resistance, Junction-to-Case: 6.25 °C/W
Thermal Resistance, Junction-to-Ambient: 714 °C/W
Maximum Operating Temperature: -55°C to +150°C
Lead Soldering Temperature: 260°C for 10 seconds
Case Type: DPAK (Surface Mount)
RoHS Compliant, Pb-Free, Halogen Free
Surge Peak Current: 16 A
Transition Frequency: Up to 90 MHz
Storage Temperature: -55°C to +150°C
Buy the ON Semiconductor Series Power Transistor: MJD44H11T4G
Purchase the ON Semiconductor power transistor MJD44H11T4G online now. This high-performance NPN device features 80V collector-emitter voltage, 8A continuous current, and 20W power dissipation. Suitable for switching regulators, converters, and power amplifiers, its surface-mount DPAK package ensures easy installation. Built for reliability, it is RoHS compliant, Pb-Free, halogen-free, and designed to deliver consistent high-speed switching. Order online today and upgrade your power management circuit with this robust and efficient transistor.
Get ON Semiconductor power transistor MJD44H11T4G today—built for high-current switching and long-lasting durability.
Frequently Asked Questions
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