The MMBD101LT1G is a high-speed silicon Schottky barrier diode designed for UHF mixer applications, detectors, and ultra-fast switching circuits. Housed in a compact SOT-23 package, it features low noise figure of 6.0 dB at 1.0 GHz, very low capacitance below 1.0 pF, and high forward conductance at 0.5 V and 10 mA. Its robust ratings include a reverse voltage of 7.0 V, maximum junction temperature of +150°C, and low reverse leakage, making it suitable for demanding RF and high-frequency applications.
Buy the ON Semiconductor Series Schottky Diodes: MBD101G
Order the ON Semiconductor MBD101G Schottky diode online today and benefit from its high-speed switching capabilities, low junction capacitance, and low noise figure. Perfect for RF applications requiring fast response and high reliability, this diode features a 7.0 V reverse voltage, low forward voltage drop, and excellent thermal stability. Whether for design prototyping or mass production, purchasing online ensures quick delivery, competitive prices, and access to detailed datasheets for seamless integration into your high-frequency circuits.
Buy ON Semiconductor MBD101G now and experience unmatched reliability and high-frequency performance, ideal for RF mixers, detectors, and ultra-fast switching circuits.
Frequently Asked Questions
Where can I buy ONSEMI MMBD101LT1G?
You can click on the BUY or RFQ button to purchase MMBD101LT1G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part MMBD101LT1G?