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ONSEMI MMBD354LT1G RF Mixer Diode

The MMBD354LT1G is a dual hot carrier mixer diode designed for UHF mixer applications, detectors, and ultra-fast switching circuits. It exhibits very low capacitance, less than 1.0 pF at zero volts, and a low forward voltage of approximately 0.5 V at 10 mA current. Suitable in automotive and industrial environments, it is AEC-Q101 qualified, Pb-Free, halogen and BFR free, and ROHS compliant. Its maximum reverse voltage is 7.0 V, with thermal resistance junction-to-ambient of 556 °C/W, making it suitable for high-frequency, low-noise RF applications with reliable performance.

Authorized Distributors
Source:Newark
Part No:MMBD354LT1G
Stock:911
Inv Date:06-10-2026
Price: Unit price: $0.175
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Source:DigiKey
Part No:MMBD354LT1G
Stock:3145
Inv Date:06-11-2026
Price: Unit price: $0.18
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Part No:MMBD354LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.18
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Part No:MMBD354LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.0616
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Part No:MMBD354LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.0616
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Part No:MMBD354LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.0868
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Source:Arrow EU
Part No:MMBD354LT1G
Stock:9000
Inv Date:06-11-2026
Price: N/A
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Part No:MMBD354LT1G
Stock:6550
Inv Date:06-11-2026
Price: N/A
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ONSEMI MMBD354LT1G RF Mixer Diode Specifications:

  • Maximum Reverse Voltage: 7.0 V
  • Total Device Dissipation on FR-5 Board: 225 mW at 25°C
  • Thermal Resistance Junction-to-Ambient: 556 °C/W
  • Junction and Storage Temperature Range: -85°C to +150°C
  • Capacitance: Less than 1.0 pF at 0 V, 1.0 MHz
  • Forward Voltage: 0.5 V Typical at 10 mA
  • Lead Material: Sn-Ag-Cu solderable leads
  • Package: SOT-23, compact surface-mount case suitable for RF circuitry
  • Compliance: AEC-Q101 Qualified, Pb-Free, Halogen Free, BFR Free, ROHS compliant

Buy the ON Semiconductor MMBD354LT1G – Reliable RF Mixer Diodes for Industrial Applications

Purchase the ON Semiconductor MMBD354LT1G online now—designed for high-frequency RF mixing, detection, and ultra-fast switching. This diode offers very low capacitance below 1.0 pF, ideal for UHF applications, with a low forward voltage around 0.5 V at 10 mA. Its compact SOT-23 package enables easy surface-mount integration into RF and microwave circuits. Qualified under AEC-Q101, it’s suitable for automotive and industrial environments, providing reliable, high-speed performance with excellent thermal stability and minimal leakage current, ensuring optimal circuit operation.

Get ON Semiconductor MMBD354LT1G today—built for precision, low noise, and long-lasting durability in high-frequency RF environments.

Frequently Asked Questions

Where can I buy ONSEMI MMBD354LT1G?

You can click on the BUY or RFQ button to purchase MMBD354LT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MMBD354LT1G?

You can download the MMBD354LT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MMBD354LT1G?

ONSEMI

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