The MMBD354LT1G is a dual hot carrier mixer diode designed for UHF mixer applications, detectors, and ultra-fast switching circuits. It exhibits very low capacitance, less than 1.0 pF at zero volts, and a low forward voltage of approximately 0.5 V at 10 mA current. Suitable in automotive and industrial environments, it is AEC-Q101 qualified, Pb-Free, halogen and BFR free, and ROHS compliant. Its maximum reverse voltage is 7.0 V, with thermal resistance junction-to-ambient of 556 °C/W, making it suitable for high-frequency, low-noise RF applications with reliable performance.
Buy the ON Semiconductor MMBD354LT1G – Reliable RF Mixer Diodes for Industrial Applications
Purchase the ON Semiconductor MMBD354LT1G online now—designed for high-frequency RF mixing, detection, and ultra-fast switching. This diode offers very low capacitance below 1.0 pF, ideal for UHF applications, with a low forward voltage around 0.5 V at 10 mA. Its compact SOT-23 package enables easy surface-mount integration into RF and microwave circuits. Qualified under AEC-Q101, it’s suitable for automotive and industrial environments, providing reliable, high-speed performance with excellent thermal stability and minimal leakage current, ensuring optimal circuit operation.
Get ON Semiconductor MMBD354LT1G today—built for precision, low noise, and long-lasting durability in high-frequency RF environments.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase MMBD354LT1G from an authorized ONSEMI distributor.
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