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ONSEMI MMBT2369ALT1G Switching Transistor

The MMBT2369A series includes high-current NPN silicon switching transistors suitable for applications requiring fast switching and high current handling. These devices are Pb-Free, Halogen Free/BFR Free, RoHS compliant, and qualified for automotive and industrial applications. With collector-emitter voltages up to 40 V and continuous collector currents of 200 mA, they offer reliable performance in switching circuits. The devices feature low saturation voltages, high current gain, and robust thermal characteristics, making them ideal for efficient control in various electronic systems and automation solutions.

Authorized Distributors
Source:Newark
Part No:MMBT2369ALT1G
Stock:1860
Inv Date:06-10-2026
Price: Unit price: $0.043
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Source:DigiKey
Part No:MMBT2369ALT1G
Stock:44149
Inv Date:06-10-2026
Price: Unit price: $0.2
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Part No:MMBT2369ALT1G
Stock:53642
Inv Date:06-11-2026
Price: Unit price: $0.2
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Part No:MMBT2369ALT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.09
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Part No:MMBT2369ALT1G
Stock:171000
Inv Date:06-10-2026
Price: Unit price: $0.027
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Part No:MMBT2369ALT1G
Stock:171000
Inv Date:06-10-2026
Price: Unit price: $0.027
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Part No:MMBT2369ALT1G
Stock:87000
Inv Date:06-10-2026
Price: Unit price: $0.0271
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Source:Arrow EU
Part No:MMBT2369ALT1G
Stock:90000
Inv Date:06-11-2026
Price: N/A
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Part No:MMBT2369ALT1G
Stock:654
Inv Date:06-11-2026
Price: N/A
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ONSEMI MMBT2369ALT1G Switching Transistor Specifications:

  • Collector-Emitter Voltage: 40 V
  • Collector-Base Voltage: 40 V
  • Emitter-Base Voltage: 45 V
  • Collector Current: 200 mA
  • Total Device Dissipation (FR-5 Board, Ta=25°C): 225 mW
  • Thermal Resistance, Junction-to-Ambient (FR-5): 556 °C/W
  • Thermal Resistance, Junction-to-Ambient (Alumina): 417 °C/W
  • Junction and Storage Temperature Range: -55°C to +150°C
  • Pb-Free, Halogen Free, RoHS compliant
  • Case Style: SOT-23
  • Device type: NPN Silicon Switch
  • Maximum Collector-Emitter Voltage: 40 V
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Emitter-Base Voltage: 45 V
  • Maximum Collector Current: 200 mA
  • Saturation Voltage (VCE(sat)) at 10 mA: 0.25 V
  • DC Current Gain (hFE): 40 - 120
  • Storage time: 5.0 ns to 13 ns
  • Turn-on time: 8.0 ns to 12 ns
  • Turn-off time: 10 ns to 18 ns
  • Package: SOT-23
  • Operating temperature range: -55°C to +150°C

Buy the ON Semiconductor Series Switching Transistor: MMBT2369ALT1G

Discover the high-performance ON Semiconductor Series MMBT2369ALT1G switching transistor, ideal for fast switching and high current applications in automation and industrial electronics. With a collector-emitter voltage of 40 V and a continuous collector current of 200 mA, this reliable device offers low saturation voltage and excellent thermal characteristics. Its compact SOT-23 package makes it suitable for space-constrained circuits. Order online today to enhance your electronic designs with high quality, RoHS-compliant components that meet rigorous industrial standards.

Order your ON Semiconductor Series MMBT2369ALT1G high-current switching transistor today and ensure reliable, efficient performance in your electronic projects.

Frequently Asked Questions

Where can I buy ONSEMI MMBT2369ALT1G?

You can click on the BUY or RFQ button to purchase MMBT2369ALT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MMBT2369ALT1G?

You can download the MMBT2369ALT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MMBT2369ALT1G?

ONSEMI

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