The MMBT489LT1G is a high-current NPN bipolar transistor optimized for load management in portable devices. This surface-mount transistor offers 30V collector-emitter voltage, 1A continuous collector current, and 2A peak current. Designed with Pb-Free, Halogen Free/BFR Free, and RoHS compliance, it provides reliable switching for power regulation in electronic applications. Its thermal characteristics include a total device dissipation of 310mW at 25°C and a junction-to-ambient thermal resistance of 176°C/W. Suitable for industrial, power management, and portable electronics requiring efficient load switching and high current handling.
Junction and Storage Temperature Range: -55°C to +150°C
Package: SOT-23
Marking Diagram: N3M
Pb-Free Package: Yes
Max Power Dissipation: 710 mW
Cutoff Frequency: 100 MHz
Collector-Emitter Breakdown Voltage: 30 V
Collector-Base Breakdown Voltage: 50 V
Emitter-Base Breakdown Voltage: 5.0 V
Collector - Cutoff Current: 0.4 µA
Collector-Emitter Cutoff Current: 0.4 µA
Base-Emitter Saturation Voltage: 0.14 V
Saturation Voltage (Ic=1A): 0.2 V
Base-Emitter Turn-on Voltage: 1 V
Output Capacitance at 1 MHz: 15 pF
Buy the ON Semiconductor Series High-Current NPN Transistor: MMBT489LT1G
Purchase the ON Semiconductor MMBT489LT1G high-current NPN transistor online today. This surface-mount device offers reliable 30V collector-emitter voltage, 1A continuous current, peak 2A, and is RoHS compliant. Perfect for load management in portable devices, industrial applications, and power regulation. Designed for efficiency and durability, it features Pb-Free construction, excellent thermal characteristics with 176°C/W junction-to-ambient, and fast switching capabilities. Order now to enhance your electronic designs with this reliable, high-performance transistor for power switching and load control.
Get ON Semiconductor MMBT489LT1G today—built for high load switching and long-lasting durability in portable electronics.
Frequently Asked Questions
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