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ONSEMI MMBT489LT1G High-Current NPN Transistor

The MMBT489LT1G is a high-current NPN bipolar transistor optimized for load management in portable devices. This surface-mount transistor offers 30V collector-emitter voltage, 1A continuous collector current, and 2A peak current. Designed with Pb-Free, Halogen Free/BFR Free, and RoHS compliance, it provides reliable switching for power regulation in electronic applications. Its thermal characteristics include a total device dissipation of 310mW at 25°C and a junction-to-ambient thermal resistance of 176°C/W. Suitable for industrial, power management, and portable electronics requiring efficient load switching and high current handling.

Authorized Distributors
Source:Newark
Part No:MMBT489LT1G
Stock:8900
Inv Date:06-10-2026
Price: Unit price: $0.505
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Source:DigiKey
Part No:MMBT489LT1G
Stock:1047
Inv Date:06-11-2026
Price: Unit price: $0.52
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Part No:MMBT489LT1G
Stock:15376
Inv Date:06-11-2026
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Part No:MMBT489LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.62
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Part No:MMBT489LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.134
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Part No:MMBT489LT1G
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Inv Date:06-11-2026
Price: Unit price: $0.134
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Part No:MMBT489LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.112
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Part No:MMBT489LT1G
Stock:98
Inv Date:06-11-2026
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ONSEMI MMBT489LT1G High-Current NPN Transistor Specifications:

  • Collector-Emitter Voltage: 30 V
  • Collector-Base Voltage: 50 V
  • Emitter-Base Voltage: 5.0 V
  • Collector Current - Continuous: 1.0 A
  • Collector Current - Peak: 2.0 A
  • Total Device Dissipation @25°C: 310 mW
  • Thermal Resistance, Junction-to-Ambient: 176°C/W
  • Total Device Dissipation @25°C (Note 2): 710 mW
  • Derate above 25°C: 57 mW/°C
  • Junction and Storage Temperature Range: -55°C to +150°C
  • Package: SOT-23
  • Marking Diagram: N3M
  • Pb-Free Package: Yes
  • Max Power Dissipation: 710 mW
  • Cutoff Frequency: 100 MHz
  • Collector-Emitter Breakdown Voltage: 30 V
  • Collector-Base Breakdown Voltage: 50 V
  • Emitter-Base Breakdown Voltage: 5.0 V
  • Collector - Cutoff Current: 0.4 µA
  • Collector-Emitter Cutoff Current: 0.4 µA
  • Base-Emitter Saturation Voltage: 0.14 V
  • Saturation Voltage (Ic=1A): 0.2 V
  • Base-Emitter Turn-on Voltage: 1 V
  • Output Capacitance at 1 MHz: 15 pF

Buy the ON Semiconductor Series High-Current NPN Transistor: MMBT489LT1G

Purchase the ON Semiconductor MMBT489LT1G high-current NPN transistor online today. This surface-mount device offers reliable 30V collector-emitter voltage, 1A continuous current, peak 2A, and is RoHS compliant. Perfect for load management in portable devices, industrial applications, and power regulation. Designed for efficiency and durability, it features Pb-Free construction, excellent thermal characteristics with 176°C/W junction-to-ambient, and fast switching capabilities. Order now to enhance your electronic designs with this reliable, high-performance transistor for power switching and load control.

Get ON Semiconductor MMBT489LT1G today—built for high load switching and long-lasting durability in portable electronics.

Frequently Asked Questions

Where can I buy ONSEMI MMBT489LT1G?

You can click on the BUY or RFQ button to purchase MMBT489LT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MMBT489LT1G?

You can download the MMBT489LT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MMBT489LT1G?

ONSEMI

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