ONSEMI NCD57090BDWR2G High-Current Power Gate Driver
The NCD57090BDWR2G is a high-current, galvanically isolated IGBT/MOSFET gate driver in a SOIC-8 package, optimized for high efficiency and reliability in power electronics. It features a peak output current of ±6.5 A, low clamp voltage drops, short propagation delays, and active Miller clamp protection, suitable for motor control, UPS, automotive, and industrial power supplies. The driver operates with input voltages from 3.3 V to 20 V, offers flexible UVLO thresholds, and is qualified for automotive applications under AEC-Q100 standards, ensuring dependable high-power switching.
ONSEMI NCD57090BDWR2G High-Current Power Gate Driver Specifications:
Peak Output Current: ±6.5 A
Input Voltage Range: 3.3 V to 20 V
Isolation Voltage: 5 kVrms
Package: SOIC-8 Wide Body
Operating Temperature Range: -40°C to 150°C
Supply Voltages: Vpp1-GND1 (up to 22 V), Vpp2-GND2 (up to 32 V), Vee2-GND2 (up to 0.3 V)
UVLO Thresholds: Vuvio1-out-on around 34 V, Vuvio1-out-off around 24 V, Vuvio2-out-on around 129 V, Vuvio2-out-off around 12 V
Propagation Delay: 40–90 ns depending on input voltage and conditions
Rise and Fall Times: Approximately 13–90 ns
Max Junction Temperature: 150°C
Thermal Resistance (Junction-to-Air): 85 K/W
ESD Capability: 42 kV (Human Body Model)
Buy the ON Semiconductor Series Power Gate Driver: NCD57090BDWR2G
Purchase the ON Semiconductor NCD57090BDWR2G today and enhance your power electronics with this reliable high-current isolated gate driver, ideal for motor control, UPS, automotive, and industrial power supplies. Its robust features include a peak output current of 6.5 A, wide voltage operation from 3.3 V to 20 V, and a 5 kVrms isolation rating for safety and performance. Ordering online ensures fast delivery and access to technical support to optimize your high-power system designs.
Buy ON Semiconductor NCD57090BDWR2G now and experience unmatched reliability and high-current switching in power control systems.
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