ONSEMI NSVMMBT5401WT1G High Voltage PNP Transistor
The MMBT5401W is a high voltage PNP silicon transistor suitable for automotive and industrial applications. It features collector-emitter voltage of -150 V, collector-base voltage of -160 V, and emitter-base voltage of -5.0 V. The device offers a continuous collector current of 500 mA, with high current gain and low saturation voltage, making it ideal for switching, amplification, and driver applications. Its thermally efficient design includes a junction-to-ambient resistance of 312°C/W and a total dissipation of 400 mW on FR-5 boards. RoHS compliant and Pb-free, it ensures reliable operation in demanding environments.
ONSEMI NSVMMBT5401WT1G High Voltage PNP Transistor Specifications:
Collector-Emitter Voltage: -150 V
Collector-Base Voltage: -160 V
Emitter-Base Voltage: -5.0 V
Collector Current: 500 mA
Total Device Dissipation: 400 mW
Thermal Resistance, Junction-to-Ambient: 312 °C/W
Ambient Temperature Range: -55°C to +150°C
Case Style: SC-70 (SOT-323)
Lead Material: Pb-free, Halogen Free, BFR Free
Maximum Storage Temperature: -55°C to +150°C
Maximum Junction Temperature: 150°C
Buy the ON Semiconductor MMBT5401W – Reliable PNP Transistor for Industrial Applications
Purchase the high voltage PNP transistor suitable for industrial and automotive applications online. The MMBT5401W offers -150 V collector-emitter voltage, 500 mA current capacity, and RoHS compliance, ensuring durable and reliable operation. Designed to handle demanding switching and amplification tasks, it features low saturation voltage, high current gain, and efficient thermal management with a junction-to-ambient resistance of 312°C/W. Perfect for circuit protection, control, and automation, you can buy this essential semiconductor component with confidence and quick delivery.
Get ON Semiconductor MMBT5401W today—built for high voltage switching and reliable operation in industrial and automotive environments.
Frequently Asked Questions
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