The FCH041N60F is an N-Channel SuperFET II FRFET MOSFET with a voltage rating of 600 V and a continuous drain current of 76 A. It features ultra-low gate charge, low on-resistance, and optimized body diode performance, making it suitable for high-efficiency switching power applications such as PFC, server power, and industrial systems. Its high avalanche energy capacity, excellent thermal performance, and compact TO-247 package ensure reliable operation and system efficiency in demanding environments, with comprehensive avalanche testing and thermal management properties.
ONSEMI FCH041N60F High-Voltage Power MOSFET Specifications:
Drain to Source Voltage: 600 V
Gate to Source Voltage: ±30 V
Continuous Drain Current: 76 A at 25°C
Pulsed Drain Current: 228 A
Avalanche Energy: 2025 mJ
Power Dissipation: 5 W
Operating Temperature Range: -55°C to +150°C
Thermal Resistance, Junction to Case: 0.21 °C/W
Thermal Resistance, Junction to Ambient: 40 °C/W
Peak Diode Recovery dV/dt: 50 V/ns
Gate Charge at 10V: 277 nC
Output Capacitance: 748 pF
Body Diode Forward Voltage: 1.2 V at 38 A
Package: TO-247
Buy the ON Semiconductor Series SuperFET II 600 V MOSFET: FCH041N60F
Experience reliable power switching with the ON Semiconductor FCH041N60F. Featuring 600 V voltage rating, 76 A continuous current, ultra-low gate charge, and optimized for efficiency, this MOSFET ensures high thermal performance and system reliability. Its robust avalanche energy handling and TO-247 package make it ideal for power supplies, industrial, and telecom applications. Purchase online today to benefit from top-tier industrial-grade performance, ensuring your power management systems operate efficiently, with dependable long-term durability and minimal energy loss.
Get ON Semiconductor FCH041N60F today—built for high-voltage efficiency and long-lasting power performance.
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