The NTB190N65S3HF is a high-voltage N-channel power MOSFET designed for demanding power switching applications such as telecom, industrial power supplies, and EV chargers. It features a maximum drain-source voltage of 650 V, low on-resistance (161 mΩ at 10 V), and a high drain current capacity of 20 A. The device offers low gate charge (34 nC), excellent avalanche energy handling, and efficient thermal performance, making it ideal for miniaturized, high-efficiency power systems with superior switching performance and system reliability.
Buy the ON Semiconductor Series SUPERFET Ill Power MOSFET: NTB190N65S3HF
Enhance your power electronics with the ON Semiconductor Series SUPERFET III NTB190N65S3HF. This high-voltage N-channel MOSFET offers 650 V withstand voltage and 20 A continuous drain current, ensuring reliable performance in demanding applications. Its low on-resistance, minimal gate charge, and excellent avalanche energy handling optimize efficiency and switching speed. Suitable for telecom, industrial power supplies, EV chargers, and UPS systems, this device is engineered for high reliability, quick switching, and thermal management, making it a critical component for advanced power conversion and management systems.
Order your ON Semiconductor Series SUPERFET Ill power MOSFET NTB190N65S3HF today and give your high-voltage projects the dependable, efficient performance they deserve.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase NTB190N65S3HF from an authorized ONSEMI distributor.
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