The NTHL020N090SC1 is an ultra low gate charge N-channel power MOSFET designed for high-voltage applications. It features a drain-to-source voltage of 900 V, a low Rds(on) of 20 mΩ, and a continuous drain current of 118 A, making it ideal for UPS, DC/DC converters, and boost inverters. Its TO-247 long lead package ensures excellent thermal performance with maximum junction-to-ambient resistance of 40°C/W. The device is RoHS compliant and undergoes 100% UI testing, ensuring high reliability in demanding power electronics environments.
ONSEMI NTHL020N090SC1 High-Voltage Power MOSFET Specifications:
Drain-to-Source Voltage: 900 V
Gate-to-Source Voltage: +19/-10 V
Maximum Continuous Drain Current: 118 A at 25°C
Power Dissipation: 503 W at Tc < 175°C
Rds(on): 20 mΩ at Vgs = 15 V, 27 mΩ at 175°C
Gate Charge: 196 nC
Output Capacitance: 296 pF
Drain-to-Source Breakdown Voltage: 900 V
Thermal Resistance Junction-to-Case: 0.30°C/W
Thermal Resistance Junction-to-Ambient: 40°C/W
Operational Junction Temperature Range: -55°C to +175°C
Case: TO-247 Long Leads
RoHS Compliant, 100% UI Tested
Buy the Buy ON Semiconductor NTHL020N090SC1 Part Number 900V Power MOSFET Online
Enhance your power electronics with the high-voltage N-channel MOSFET. This MOSFET features a drain-to-source voltage of 900V, low Rds(on) of 20 mΩ, and a continuous drain current of 118A, making it suitable for UPS, DC/DC converters, and boost inverters. Its TO-247 long lead package provides excellent thermal management with a maximum junction-to-ambient resistance of 40°C/W. RoHS compliant and fully tested, it guarantees high reliability and efficiency for demanding power applications. Order online today to ensure seamless integration into your designs.
Buy ON Semiconductor NTHL020N090SC1 now and experience unmatched reliability and high-voltage power handling in your electronic applications.
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