The NTMFS6H818N is a compact, high-performance N-channel power MOSFET designed for efficient switching applications. With an 80 V drain-to-source voltage rating, low Rds(on), and an aggressive gate charge, it minimizes conduction and driver losses. Its small footprint (5x6 mm) suits space-constrained designs, while high pulsed current capabilities ensure reliability under demanding conditions. The device features low gate charge and capacitance, is lead-free, ROHS compliant, and ideal for power management, automotive, industrial, and consumer electronics, providing excellent efficiency and thermal stability.
ONSEMI NTMFS6H818NT1G Power MOSFET Specifications:
Drain-to-Source Voltage: 80 V
Gate-to-Source Voltage: 220 V
Continuous Drain Current: 123 A at 25°C, 87 A at 100°C
Power Dissipation: 136 W at 25°C, 68 W at 100°C
Pulsed Drain Current: 900 A at 25°C, 10 μs pulse duration
Junction-to-Case Thermal Resistance: 1.1 °C/W
Junction-to-Ambient Thermal Resistance: 39 °C/W
Gate Threshold Voltage: 2.0 to 4.0 V
On-Resistance: 31 to 37 mΩ at 10 V
Output Capacitance: 440 pF
Gate Charge: 46 nC
Device Package: SO-8FL (5x6 mm)
Lead Soldering Temperature: 260°C
Buy the ON Semiconductor Series 6H818N Power MOSFET: NTMFS6H818N
Experience reliable power switching with the ON Semiconductor NTMFS6H818N. Featuring a compact 5x6 mm footprint, it offers 80 V drain-to-source voltage, low Rds(on), high pulsed current capacity, and excellent thermal stability. Its low gate charge and capacitance minimize driver losses, making it ideal for efficient industrial, automotive, and consumer electronics. Lead-free and ROHS compliant, this device ensures environmentally friendly and efficient operation, providing longevity and superior performance in demanding electronic systems. Purchase online today for optimal power management solutions.
Get ON Semiconductor NTMFS6H818N today—built for precision and long-lasting durability in power switching applications.
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