The NTMS10P02R2 is a P-Channel enhancement-mode Power MOSFET in a miniature SOIC-8 surface mount package, designed for power management in portable and battery-powered devices such as cellular phones and PCMCIA cards. It features ultra-low Rps(on), high-speed soft recovery diodes, avalanche energy capabilities, and logic-level gate drive, providing higher efficiency and extended battery life. Its robust specifications include a drain-to-source voltage of -20 V, continuous drain current of -10 A at 25°C, and a total power dissipation of 25 W, making it suitable for demanding electronic circuits.
Mounting Information: Standard surface-mount dimensions
Buy the ON Semiconductor Series NTMS Series Power MOSFET: NTMS10P02R2
Enhance your electronic projects with the NTMS10P02R2 Power MOSFET, designed in a compact SOIC-8 package for efficient power management. This device offers ultra-low Rps(on) for minimal conduction losses, high-speed diode recovery for fast switching, and robust ratings including a -20 V drain-to-source voltage and -10 A continuous drain current at 25°C. Its thermal performance supports high power dissipation up to 25 W, making it perfect for portable and battery-powered systems where efficiency and reliability are critical. Order online today and improve your power efficiency!
Order your ON Semiconductor Series NTMS10P02R2 Power MOSFET today and enhance your portable device power solutions with reliable High-Speed operation.
Frequently Asked Questions
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