This dual series Schottky barrier diode is ideal for high-density mounting in RF and detection applications. It features a very small interterminal capacitance of 0.69pF and a low forward voltage of 0.23V. Rated for a peak reverse voltage of VRM, it can handle a forward current of 30mA with a maximum junction temperature of 125°C. Packaged in the compact SC-59, TO-236, or SOT-23 packages, it offers reliable performance for high-frequency circuits and switching applications, ensuring durable and precise operation.
Interterminal Capacitance: 0.69pF at VR=0.2V, f=1MHz
Forward Voltage: 0.23V at 30mA
Package Types: SC-59, TO-236, SOT-23
Package Dimensions: 183x72x185mm (external), reel packaging for 3,000 units
Lead-free compliance indicated on packaging labels
Reel and box packaging suitable for automated surface mounting
Maximum Ratings stress ratings only, functional operation outside limits is not guaranteed
Operating temperature range from -55°C to +125°C
Buy the Buy ON Semiconductor Schottky Barrier Diode Part Number 1SS351TBE Online
Order the ON Semiconductor Schottky Barrier Diode 1SS351TBE online today to secure a high-performance, low-capacitance diode perfect for RF detection and switching applications. With a compact package, low forward voltage, and high reliability, this diode ensures efficient circuit operation. Whether for prototyping or production, purchasing online offers fast delivery and full availability of this essential component. Trust ON Semiconductor’s quality for your electronic projects and keep your systems running smoothly with this high-speed diode.
Buy ON Semiconductor 1SS351TBE now and enjoy reliable high-speed switching and peak RF performance in your electronic designs.
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