The NTNUS3171PZ is a small signal P-Channel MOSFET ideal for high-speed switching and power management in ultra-thin portable electronics. Featuring a low Rps(on) solution in a compact 1.0 x 0.6 mm SOT-1123 package, it supports a gate voltage rating of 1.5 V and operates with a drain-to-source voltage of 20 V. Its low on-resistance and high current capacity up to 200 mA make it perfect for high side switching and interfacing applications. The device is Pb-free and designed for reliable performance in space-constrained environments, with thermal and electrical characteristics optimized for efficient power handling.
On Resistance (Rds(on)): 20 to 55 mΩ at -4.5V Gate-Source voltage
Capacitances: Ciss 13 pF, Coss 34 pF, Crss 1.6 pF
Switching Delay Time: 30 ns, Fall Time: 145 ns
Soldering Lead Temperature: 260°C for 10s
Package: SOT-1123 (524AA-01), Pb-Free
Dielectrics include UL 94V-0 compatibility
Maximum Lead Thickness: Includes Lead Finish
Surface-mount on FR4 with 2mm, 1 oz Cu pad recommended
Buy the Buy Semiconductor Industry Small Signal MOSFET Part Number NTNUS3171PZ Online
Order the NTNUS3171PZ P-Channel MOSFET online today for high-speed switching in ultra-thin electronics. Designed with a low Rds(on) in a tiny 1.0 x 0.6 mm SOT-1123 package, it supports -20V drain-to-source voltage and up to 200 mA continuous drain current. Perfect for portable electronics, its low on-resistance and high reliability make it ideal for high side switching and power management. Secure your inventory now and benefit from quick delivery, ensuring your projects stay on schedule with reliable, Pb-free components.
Get NTNUS3171PZ today—built for high-speed switching with low Rds(on) in a compact package for space-constrained power management.
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