The NVD6824NL is a high-performance single N-channel Power MOSFET with a 100 V drain-to-source voltage, capable of handling up to 41 A continuous drain current. Designed for efficient power switching with low Rds(on) to minimize conduction losses, it features avalanche energy specifications and is AEC-Q101 qualified for automotive applications. The device is Pb-Free, Halogen-Free, and RoHS compliant, making it suitable for eco-friendly manufacturing. Its thermal and electrical ratings ensure reliability in demanding power management and switching scenarios, with a compact DPAK package for easy mounting and integration.
Operating Junction and Storage Temperature Range: -55°C to +175°C
Avalanche Energy (at 25°C): 80 mJ
Lead Soldering Temperature: 260°C for 10 seconds
Reverse Recovery Time of Body Diode: 38 ns
Reverse Recovery Charge: 59 nC
Source Current (Body Diode): 4 A
Gate Threshold Voltage: 1.8 V to 2.5 V
Gate Charge: 34 nC
Capacitances (Ciss, Coss): 3468 pF and 187 pF respectively
Switching Time (Turn-On/Off): Delay approx. 38 ns
Maximum Pulsed Drain Current (TP=10µs): 238 A
RoHS, Pb-Free, Halogen-Free
Buy the Power Semiconductor Series NVD6824NL N-Channel Power MOSFET: NVD6824NL
Order the NVD6824NL Power MOSFET online today to enjoy dependable high-current switching in compact DPAK packages. Engineered for automotive and industrial applications, it delivers low Rds(on) for reduced conduction losses and high avalanche energy for robust power handling. Its environmentally friendly, RoHS-compliant design ensures compliance with modern standards. Easy to mount, thermally efficient, and capable of handling up to 41 A, this device is ideal for power management, motor drives, and switching power supplies. Purchase now for optimal efficiency and durability in your projects.
Buy NVD6824NL Power MOSFET now and experience unmatched reliability and performance with low conduction losses suitable for high-current switching.
Frequently Asked Questions
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