The PZTA14 is a high-gain NPN Darlington transistor designed for applications requiring extremely high current gain at collector currents up to 1.0 A. Sourced from Process 05, it features a collector-emitter voltage of 30 V, emitter-base voltage of 10 V, and continuous collector current of 12 A. Packaged in a SOT-23 package with dimensions suitable for compact circuit designs, it offers a total device dissipation of 625 mW and thermal resistances of 83.3°C/W junction-to-case and 200°C/W junction-to-ambient. Ideal for high-gain switching and amplification tasks, it is suitable for a variety of electronic functions requiring high current gain and reliable performance.
Purchase the ON Semiconductor high-gain NPN transistor PZTA14 online today. Designed for high collector current and excellent thermal management, it features a collector-emitter voltage of 30 V, collector-base voltage of 30 V, emitter-base voltage of 10 V, and continuous collector current of 12 A. Packaged in a compact SOT-23 form factor, it offers a total dissipation of 625 mW and optimal thermal resistances for reliable operation. Perfect for amplification, switching, and electronic signal processing in space-constrained circuits, it provides high performance and durability for diverse electronic applications.
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You can download the PZTA14 datasheet or visit the ONSEMI website for support.
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