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ONSEMI NTMFS1D7N03CGT1G Power MOSFET

The NTMFS1D7N03CG is a high-performance N-channel power MOSFET designed for efficient switching applications. It features a 30V drain-to-source voltage rating, ultra-low Rds(on) for improved system efficiency, wide safe operating area, and excellent thermal conduction thanks to its advanced SO8-FL package. Ideal for hot swap, power load switching, and battery management, this device offers high drain current capacity up to 170A, low gate charge, and high pulsed avalanche energy. Its Pb-Free, halogen, and BFR-free compliance ensure environmentally friendly use in demanding electronic systems.

Authorized Distributors
Source:DigiKey
Part No:NTMFS1D7N03CGT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.79
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Part No:NTMFS1D7N03CGT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.91
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Part No:NTMFS1D7N03CGT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.4906
Buy/RFQ:
Part No:NTMFS1D7N03CGT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.4906
Buy/RFQ:

ONSEMI NTMFS1D7N03CGT1G Power MOSFET Specifications:

  • Drain-to-Source Voltage: 30 V
  • Gate-to-Source Voltage: ±20 V
  • Continuous Drain Current at 25°C: 170 A
  • Power Dissipation at 25°C: 7 W
  • Power Dissipation at 38°C: 38 W
  • Pulsed Drain Current: 900 A
  • Source Current (Body Diode): 73 A
  • Single Pulse Avalanche Energy: 128 mJ
  • Operating Junction Temperature Range: -55°C to +175°C
  • Lead Soldering Temperature (Reflow): 260°C for 10s
  • Package: SO8-FL (5x6mm), Case 488AA
  • On-Resistance (Max): 1.74 mΩ at Vgs = 10V, Id = 18A
  • Gate Threshold Voltage: 1.3-2.2 V
  • Gate Resistance: 0.8 Ω
  • Total Gate Charge: 48 nC
  • Reverse Recovery Time: 55 ns
  • Drain-to-Source Breakdown Voltage: 30 V
  • Leakage Current (Zero Gate Voltage): 1.0 nA at 25°C
  • Capacitance: Input 3780 pF, Output 1770 pF, Reverse 50 pF
  • Switching Delay Times: On delay 16 ns, Off delay 39 ns

Buy the Buy ON Semiconductor NTMFS1D7N03CG Part Number NTMFS1D7N03CG Online

Upgrade your electronic systems with the ON Semiconductor Power MOSFET designed for high-power switching applications. With a 30V drain-to-source voltage rating, 170A continuous drain current capacity, ultra-low Rds(on), and advanced thermal conduction, this device ensures efficiency and reliability. Its robust construction supports hot swap, load switching, and battery management, making it ideal for demanding industrial, automotive, and consumer electronics. Purchase online today and experience superior performance and environmentally friendly features like Pb-Free and RoHS compliance.

Get ON Semiconductor NTMFS1D7N03CG today—built for high current switching, low Rds(on), and reliable thermal performance in power applications.

Frequently Asked Questions

Where can I buy ONSEMI NTMFS1D7N03CGT1G?

You can click on the BUY or RFQ button to purchase NTMFS1D7N03CGT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NTMFS1D7N03CGT1G?

You can download the NTMFS1D7N03CGT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NTMFS1D7N03CGT1G?

ONSEMI

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