The PZTA9S6ST1G is a high-voltage PNP silicon transistor featuring a collector-emitter voltage of -450 Vde and a collector current of -500 mA. Designed for high-voltage applications, it offers a maximum junction temperature of 150°C and a total power dissipation of 15 W at 25°C. Its RoHS-compliant, Pb-Free, Halogen-Free construction ensures environmentally friendly operation. Suitable for high-voltage switching, amplification, and other power management tasks, this transistor is mounted on a compact SOT-223 case, with thermal resistance up to 83.3°C/W, providing reliable thermal performance in various electronic circuits.
ONSEMI PZTA96ST1G High Voltage PNP Transistor Specifications:
Collector-Emitter Voltage: -450 V
Collector-Base Voltage: -450 V
Emitter-Base Voltage: -5.0 V
Collector Current: -500 mA
Total Power Dissipation: 15 W at 25°C
Thermal Resistance, Junction-to-Ambient: 83.3°C/W
Junction Temperature: 150°C
Storage Temperature Range: -65°C to +150°C
Case Type: SOT-223 (TO-261)
Pb-Free, Halogen-Free, RoHS Compliant
Maximum Junction Temperature: 150°C
Buy the ON Semiconductor Series High Voltage PNP Transistor: PZTA9S6ST1G
Discover the reliable high-voltage PNP transistor suitable for power switching and amplification applications. The PZTA9S6ST1G offers a collector-emitter voltage of -450 V and a collector current of -500 mA, ensuring excellent performance in demanding circuits. Its RoHS-compliant and Pb-Free construction makes it environmentally friendly and safe for various electronic applications. Packaged in a compact SOT-223 form factor, it provides efficient heat dissipation with a thermal resistance of 83.3°C/W. Ideal for demanding power management tasks requiring high voltage and stability.
Order your ON Semiconductor Series High Voltage PNP Transistor PZTA9S6ST1G today and give your power circuits the dependable quality they deserve.
Frequently Asked Questions
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