This high-performance N-channel power MOSFET offers low Rds(on) to minimize conduction losses, low gate charge for reduced driver losses, and high current capacity up to 470A. Features include a max drain-to-source voltage of 60V, low gate-to-source voltage of 0V, and excellent thermal and electrical characteristics suitable for power tools, UAVs, battery management systems, and home automation. The device maintains reliable operation at high temperatures, with a maximum junction temperature of 175°C, and features a compact H-PSOF8L package for easy integration in high-current applications.
On Resistance Rds(on): 0.75 mΩ at 10 V, 1.20 mΩ at 6 V
Charge (Qg): 69 nC at 6 V, 170 nC at 10 V
Input Capacitance: 13730 pF
Output Capacitance: 6912 pF
Reverse Transfer Capacitance: 92 pF
Thermal Resistance Junction-to-Ambient: 36°C/W
Thermal Resistance Junction-to-Case: 0.48°C/W
Maximum Pulsed Drain Current: 900 A
Single Pulse Avalanche Energy: 800 mJ
Operating Temp Range: -55°C to +175°C
Package: H-PSOF8L, 11.68x9.80 mm
Buy the ON Semiconductor Series Power MOSFET: NTBLSOD7NO6C
Purchase the ON Semiconductor Power MOSFET NTBLSOD7NO6C now to leverage its high current handling up to 470A, low Rds(on), and reduced gate charge for efficient power management. Its robust thermal performance, with a maximum junction temperature of 175°C, and compact H-PSOF8L package make it ideal for power tools, UAVs, BMS, and automation systems. Enjoy fast shipping and reliable delivery for your high-current electronics projects. Get yours online today for superior switching efficiency and thermal stability.
Order your ON Semiconductor NTBLSOD7NO6C power MOSFET today and ensure high current performance with low conduction and switching losses for your applications.
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