The BU4S11G2 is a reliable 2-input NAND gate in an SSOP5 package, operating within a voltage range of +3V to +16V. It features low power consumption, high noise immunity, and high input impedance, making it suitable for various digital logic applications. The device incorporates an inverter-based buffer for improved I/O transmission, minimizing propagation delay variations. Its wide temperature range of -40°C to +85°C and high fan-out capacity ensure dependable performance in industrial environments. The IC is designed for monolithic silicon integration, with protections against basic electrical faults, though it lacks radiation shielding.
Features include high noise immunity, high fan-out, and buffered output
This product is a silicon monolithic IC with no radiation protection
Buy the ROHM BU4S11G2 – Reliable NAND Gate for Industrial Applications
Purchase the ROHM BU4S11G2 NAND gate online now to ensure reliable digital logic performance in your industrial projects. Its wide voltage range, low power consumption, and high noise immunity make it an ideal choice for robust circuit design. With a compact SSOP5 package and excellent temperature tolerance, it ensures stable operation in demanding environments. Get quick delivery and support for designing high-performance electronic systems by ordering this versatile and durable logic device today.
Order your ROHM BU4S11G2 NAND Gate today and enhance your digital circuits with dependable, high-performance logic components suited for industrial use.
Frequently Asked Questions
Where can I buy ROHM BU4S11G2TR?
You can click on the BUY or RFQ button to purchase BU4S11G2TR from an authorized ROHM distributor.
How do I troubleshoot issues or seek technical support for part BU4S11G2TR?