The PNP digital transistor DTA114YU3 HZG combines built-in bias resistors with a high-voltage capacity of 50V and an output current of -100mA. Designed for inverter, interface, and driver applications, it features a compact SOT-323 package with a maximum power dissipation of 200mW and a junction temperature of 150°C. The device simplifies circuit design by eliminating the need for external biasing resistors, making it ideal for robust, high-reliability switching and interface circuits in industrial electronics.
ROHM DTA114YU3HZGT106 Digital Transistor Specifications:
Package: SOT-323
Voltage Range: Vcc -50 V, Vin -40 to 6 V
Output Current: -70 mA, Collector Current: -100 mA
Power Dissipation: 200 mW
Junction Temperature: 150 °C
Storage Temperature: -55 to +150 °C
Input Resistance: 7 to 13 kΩ
Built-in Bias Resistors: Ry = 10 kΩ, R2 = 47 kΩ
Transition Frequency: 250 MHz
Dimensions: Length 1.90–2.10 mm, Width 0.25–0.40 mm, Height 2.00–2.20 mm
Buy the ROHM Series Digital Transistor: DTA114YU3 HZG
Purchase the ROHM DTA114YU3 HZG digital transistor online today to ensure your circuits benefit from high-voltage capacity and built-in bias resistors. This compact and reliable PNP transistor simplifies circuit design by eliminating external biasing components, making it suitable for inverter, interface, and driver applications. With a maximum collector current of -100mA, voltage rating of 50V, and a power dissipation of 200mW, it offers high performance and durability in industrial electronic systems, ensuring long-lasting, efficient operation.
Get ROHM DTA114YU3 HZG today—built for precision, reliability, and simple circuit integration in high-voltage switching applications.
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